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Details, datasheet, quote on part number:ZXMD63C03X
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Datasheet text preview:
ZXMD63C03X
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
MSOP8
FEATURES · · · · · · · · · Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
N-CHANNEL P-CHANNEL
APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control
ORDERING INFORMATION
D EVIC E Z X M D 6 3C 03 X T A Z X M D 6 3C 03 X T C R E E L SIZE (inches) 7 13 T A P E WIDTH (mm) 1 2m m embossed 1 2m m embossed Q U A NT I TY P E R REEL 1 0 00 units 4 0 00 units
Top View
DEVICE MARKING · ZXM63C03
PROVISIONAL ISSUE A - JUNE 1999 13
ZXMD63C03X
ABSOLUTE MAXIMUM RATINGS.
P A RA M ET ER D r a i n - S o u r c e Voltage G a t e- Source Voltage C o n ti n u o u s Drain Current (V G S=4 . 5 V ; T A=2 5 ° C ) ( b ) ( d ) (V G S=4 . 5 V ; T A= 70 ° C ) ( b ) ( d ) P u l s e d Drain Current (c)(d) C o n ti n u o u s Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) P o w e r Dissipation at T A=2 5 ° C (a)(d) L i n ea r Derating Factor P o w e r Dissipation at T A=2 5 ° C (a)(e) L i n ea r Derating Factor P o w e r Dissipation at T A=2 5 ° C (b)(d) L i n ea r Derating Factor O p er a ti n g and Storage Temperature Range S YM BO L V D SS V GS ID IDM IS ISM PD PD PD T j: T st g 2.3 1.8 14 1.5 14 0.87 6.9 1.04 8.3 1.25 10 -55 to +150 N-CHANNEL 30 ± 20 -2.0 -1.6 -9.6 -1.4 -9.6 P-CHANNEL -30 UNIT V V A A A A W mW /°C W mW /°C W mW /°C °C
THERMAL RESISTANCE
PA RA M E TE R Ju n c t i o n to Ambient (a)(d) Ju n c t i o n to Ambient (b)(d) Ju n c t i o n to Ambient (a)(e) SYM BO L R J A R J A R J A VALUE 143 100 120 UNIT °C/W °C/W °C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - JUNE 1999 14
ZXMD63C03X
N-CHANNEL CHARACTERISTICS
Max Power Dissipation (Watts)
100
Refer Note (a)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
ID - Drain Current (A)
10
Refer Note (b) Refer Note (a)
10
DC 1s 100m s 10m s 1m s 100us
0.1
0.1
10
10
100
0
20
40
60
80
1 00
120
140
160
VDS - Drain-Source Voltage (V)
T - Temperature (°)
Safe Operating Area
Derating Curve
120
Refer Note (b)
160
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
100 80 60
D= 0.5
140 120 100 80 60 40 20
D=0.2 D=0.1 D= 0. 05 D= 0.5
Refer Note (a)
40 20
D =0.2 D=0.1 D= 0.05
0 0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
0 0.0001
Si ngl e Pulse
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
PROVISIONAL ISSUE A - JUNE 1999 15
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