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Details, datasheet, quote on part number:ZXT10N15DE6TA
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Datasheet text preview:
ZXT10N15DE6
SuperSOTTM 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES · · · · · · · · · Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 12A IC=4A Continuous Collector Current SOT23-6 package
SOT23-6
APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control
ORDERING INFORMATION DEVICE ZXT10N15DE6TA ZXT10N15DE6TC DEVICE MARKING 617 REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units
C C B
Top View
C C E
10000 units
ISSUE 1 - SEPTEMBER 2000 1
ZXT10N15DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB PD LIMIT 15 15 5 13 4 500 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V V A A mA W mW/°C W mW/°C °C
PD
Tj:Tstg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL RJA RJA VALUE 113 73 UNIT °C/W °C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 1 - SEPTEMBER 2000 2
ZXT10N15DE6
TYPICAL CHARACTERISTICS
ISSUE 1 - SEPTEMBER 2000 3
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