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Details, datasheet, quote on part number:P35-5123-000-200
 
 
Part:P35-5123-000-200
Category:RF & Microwaves => Drivers
Description:20-26GHz 12dB Gain, 23dBm P1dB
Company:Bookham Technology
Datasheet:Download P35-5123-000-200 datasheet   File size : 763 kB
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Datasheet text preview:
Data sheet
HEMT MMIC Driver Amplifier, 20 - 26GHz
The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. With 0.3mm bondwires at the input and output, over 12dB gain from 20-26GHz is achieved. This product is intended for use in fixed-point microwave systems and satellite communications. The die is fabricated using Bookham Technology's 0.20µm gate length, pHEMT process and is fully protected using Silicon Nitride passivation for excellent performance and reliability.
Features · 23dBm Output Power @ 24GHz · 12dB Gain from 20 to 26GHz · Small Die Size (2 x 1mm)
www.bookham.com
Thinking RF solutions
P35-5123-000-200 Electrical Performance
Ambient Temperature 22±3º C, Zo = 50, Vdd = 4.5V, Vg1 set for Id1=50mA, Vg2 set for Id2=90mA. Unless otherwise stated
Parameter Small Signal Gain Gain slope Input Return Loss Output Return Loss Output power at 1dB gain compression First Stage Current Second Stage Current Thermal Resistance Conditions 20 20 20 20 ­ ­ ­ ­ 26GHz 26GHz 26GHz 26GHz Min Typ 12 ± 0.5 10 10 23 50 90 130 Max Units dB dB dB dB dBm mA mA °C/W
24GHz, 5V By Adjustment of Vg1 By Adjustment of Vg2 -
Notes
1. All parameters measured on wafer Typical RFOW Performance (----- With Bondwires)
Gain
16
Reverse Isolation
0
12
Reverse Isolation (dB)
14
Gain (dB)
10 8 6 4 2 0 18 20 22 24 Frequency (GHz) 26
20
40
60 18 20 22 24 26 Frequency (GHz)
Input Return Loss
0 0
Output Return Loss
Return Loss (dB)
Return Loss (dB)
5 10 15 20 25 18 20 22 24 26 Frequency (GHz)
5 10 15 20 25 18 20 22 24 26 Frequency (GHz)
25 24 23
Output Power @ 1dB compression (5v)
Pout vs Pin (5v)
24 22 Pout (dBm) 20 18 20GHz 16 14 22GHz 24GHz
Pout (dBm)
22 21 20 19 18 17 16 15 20 21 22 23 24 Frequncy (GHz) 25 26
0
2
4
6 8 10 Pin (dBm)
12
14
16
www.bookham.com www.bookham.com
Thinking RF solutions
P35-5123-000-200
Typical RFOW Performance
Gain vs Pin (5V)
18 20GHz 24GHz 14
Current Ids (mA) 200
Current vs Pin (5V)
16 Gain (dB)
22GHz
175
150 20GHz 22GHz 24GHz
12
125
10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Pin (dBm)
100 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Pin (dBm)
PAE vs Pin(5V)
25 20 PAE (%) 15 10 20GHz 5 0 0 2 4 6 8 10 Pin (dBm) 12 14 16 22GHz 24GHz
www.bookham.com
Thinking RF solutions