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Details, datasheet, quote on part number:P35-5126-000-200
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Datasheet text preview:
Data sheet
HEMT MMIC Driver Amplifier, 25-30GHz
The P35-5126-000-200 is a high performance 25-30GHz Gallium Arsenide driver amplifier. This product is intended for use in fixed-point microwave systems and satellite communications. The die is fabricated using Bookham Technology's 0.20µm gate length, pHEMT process and is fully protected using Silicon Nitride passivation for excellent performance and reliability.
Features · Over 22dBm Output Power @ 28GHz · 10dB Gain from 25 to 30GHz · Small Die Size (2 x 1mm)
www.bookham.com
Thinking RF solutions
P35-5126-000-200 Electrical Performance
Ambient Temperature 22±3º C, Zo = 50, Vdd = 4V, Vg1 set for Id1=50mA, Vg2 set for Id2=90mA Unless otherwise stated
Parameter Small Signal Gain Gain slope Input Return Loss Output Return Loss Output power at 1dB gain compression First Stage Current Second Stage Current Thermal Resistance Conditions 25 25 25 25 30GHz 30GHz 30GHz 30GHz Min Typ 10 ± 0.5 10 10 22 50 90 130 Max Units dB dB dB dB dBm mA mA °C/W
28GHz, Vdd 5V By Adjustment of Vg1 By Adjustment of Vg2 -
Notes
1. All parameters measured on wafer
Typical RFOW Performance (----- With Bondwires)
Gain
14 12 10 Gain (dB) 8 6 4 2 0 60 20 Reverse Isolation (dB) 0
Reverse Isolation
20
40
20
22
24
26 Frequency (GHz)
28
30
32
22
24
26 Frequency (GHz)
28
30
32
Input Return Loss
0 0
Output Return Loss
5 Return Loss (dB) Return Loss (dB)
5
10
10
15
15
20
20
25 20 22 24 26 Frequency (GHz) 28 30 32
25 20
22
24
26 Frequency (GHz)
28
30
32
www.bookham.com www.bookham.com
Thinking RF solutions
P35-5126-000-200
Typical RFOW Performance
Output Power @ 1dB Compression
Pout vs Pin (4V)
24
23
23 21 Pout (dBm) Pout (dBm)
4V 4.5V 5V
22
21
19
20 17
26GHz 28GHz 30GHz
19
18 24 25 26 27 Frequency (GHz) 28 29 30
15 0 2 4 6 8 Pin (dBm) 10 12 14 16
Gain vs Pin (4v)
Gain vs Pin (4V) 14 12 10 Gain (dB) 8 6 4
26GHz 28GHz 30GHz
Current vs Pin (4V)
175
Current Ids (mA)
150
125
26GHz 28GHz 30GHz
2 0 -10 -5 0 Pin (dBm) 5
100 10 15
0
2
4
6
8 Pin (dBm)
10
12
14
16
PAE vs Pin (4v)
20 23
Pout vs Pin (5V)
15 Pout (dBm)
26GHz 28GHz 30GHz
21
PAE (%)
10
19
5
17
26GHz 28GHz 30GHz
0 0 2 4 6 8 Pin (dBm) 10 12 14 16
15 0 2 4 6 8 Pin (dBm) 10 12 14 16
www.bookham.com
Thinking RF solutions
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