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Details, datasheet, quote on part number:P35-5127-000-200
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Datasheet text preview:
Data sheet
HEMT MMIC Driver Amplifier, 22-34GHz
The P35-5127-000-200 is a high performance 22-34GHz Gallium Arsenide driver amplifier. This product is intended for use in fixed-point microwave systems and point to point microwave systems. The second and third stages have a common Drain and Gate connection The die is fabricated using Bookham Technology's 0.20um gate length, pHEMT process and is fully protected using Silicon Nitride passivation for excellent performance and reliability.
Features · 20dBm Output Power · 18dB Gain
www.bookham.com www.bookham.com
Thinking RF solutions
P35-5127-000-200 Electrical Performance
Ambient Temperature 22±3º C, Zo = 50, Vd1/2 = 3V/5V, Vg1 set for Id1=38mA, Vg2 set for Id2=136mA U.O.S
Parameter Small Signal Gain Input Return Loss Output Return Loss P1dB Stage 1 Drain Current Stage 2 & 3 Drain Current Conditions 22 34GHz 22 34GHz 22 34GHz 22 34GHz By Adjustment of Vg1 By Adjustment of Vg2/3 Min 15 7 7 18 Typ 18 12 12 20 38 136 Max Units dB dB dB dBm mA mA
Notes
1. All parameters measured on wafer
Typical RFOW Performance
Gain (dB)
25 20 15 10 5 0 20 22 24 26 28 30 32 Frequency (GHz) 34 36
Isolation (dB) 20 0
Reverse Isolation (dB)
Gain (dB)
40
60
80 20 22 24 26 28 30 32 34 36
Input Return Loss (dB)
0
0
Output Return Loss (dB)
Return Loss (dB)
5
Return Loss (dB)
5
10
10
15
15
20 20 22 24 26 28 30 32 34 36 Frequency (GHz)
20 20 22 24 26 28 30 32 34 36 Frequency (GHz)
www.bookham.com www.bookham.com
Thinking RF solutions
P35-5127-000-200
Typical RFOW Performance
Output Power @ 1dB compression
22 20 Pout (dBm)
Pout (dBm) 22 20 18 16 14 12 10
Pout vs Pin
18 16 14 12 10 22 24 26 28 30 Frequncy (GHz) 32 34
24GHz 28GHz 32GHz -12 -10 -8 -6 -4 -2 0 Pin (dBm) 2 4 6
Gain vs Pin
25 20
200
Total Current vs Pin
15 10 24GHz 5 0 -12 -10 -8 -6 -4 -2 0 Pin (dBm) 2 4 6 28GHz 32GHz
Current Ids (mA)
175
Gain (dB)
150 24GHz 28GHz 32GHz 100 -12 -10 -8 -6 -4 -2 0 Pin (dBm) 2 4 6
125
www.bookham.com
Thinking RF solutions
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