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Details, datasheet, quote on part number:P35-5129
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Datasheet text preview:
Data sheet
Engineering Datasheet
HEMT MMIC X-Band Driver Amplifier 8.5 10.5GHz
The P35-5129-000-200 is a two stage, high performance 8.5 10.5 GHz Gallium Arsenide monolithic medium power amplifier. The amplifier is especially suited for use as a driver amplifier in instrumentation, communications and electronic warfare systems. The circuit is DC blocked at the RF input and output The die is fabricated using Bookham's pHEMT process and is fully protected using Silicon Nitride passivation for excellent performance and reliability.
MMICS
Bookham Technology plc Caswell Towcester Northamptonshire NN12 8EQ UK · Tel: +44 (0) 1327 356 789 · Fax: +44 (0) 1327 356 698 rfsales@bookham.com
Important Notice Bookham Technology has a policy of continuous improvement. As a result certain parameters detailed on this flyer may be subject to change without notice. If you are interested in a particular product please request the product specification sheet, available from any RF sales representative.
Features · 1W Output Power (1dB Gain Compression) · 20 dB Gain Typical · pHEMT technology
Electrical Performance
Ambient temperature = 22±3º C, Zo = 50, Vdrain1 = +5V, Vdrain2 = +6V, Vgate1 & 2 = -0.35V (Id = 50% Idss)
Parameter Small Signal Gain Input Return Loss P-1dB Output Power Max PAE Total circuit current Conditions 8.5GHz 8.5GHz 8.5GHz 8.5GHz 10.5GHz 10.5GHz 10.5GHz 10.5GHz Min 30 Typ 20 15 30 550 Max Units dB dB dBm % mA
Chip Size: 3.25 x 2.3 x 0.1mm
Ordering Information
P35-5129-000-200
www.bookham.com
462/SM/XXXXX/200 Issue Draft
© Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
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