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Details, datasheet, quote on part number:P35-5142-000-200
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Datasheet text preview:
Data sheet
HEMT MMIC Broadband Amplifier, < 0.5 - 40GHz
The P35-5142-000-200 is a high performance 0.5 - 40GHz Gallium Arsenide monolithic travelling wave broadband amplifier. The broadband amplifier is especially suited for use as a gain block in communications systems operating at electrical data rates up to 40Gb/s (OC768/STM-256). The circuit is DC coupled at the RF input and output, off-chip decoupling capacitors on the bias lines are required to ensure flat gain response down to KHz frequencies. The amplifier requires a Vdd supply of +10V and a first gate bias set to give 50% Idss. The second gate bias is fixed at +2V. The die is fabricated using Bookham's pHEMT process and is fully protected using Silicon Nitride passivation for excellent performance and reliability.
Features · Cascode Configuration · 12 dB Gain Typical · pHEMT technology
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Thinking RF solutions
P35-5142-000-200 Electrical Performance
Ambient temperature = 22±3º C, Zo = 50, Vdd = 10V, Vg1 Set for Id = 50% Idss, Vg2 = +2.0V
Parameter
1
Conditions 0.5GHz 0.5GHz 0.5GHz 0.5GHz 40GHz 40GHz 40GHz 40GHz
Min -
Typ 12 ±1 10 10 ±5 90
Max -
Units dB dB dB dB º mA
Small Signal Gain Gain Ripple Input Return Loss Output Return Loss Deviation from Linear insertion Phase Bias supply current (Idd)
0.5GHz - 35GHz Vdd =10V Vg1=50%Idss
Notes
1. All Measurements RFOW
Typical RFOW Performance
Gain
16 14
Isolation(dB)
0 10 20 30 40 50
Reverse
12
Gain (dB)
10 8 6 4 2
0.5
20.5
20.5
25.5
25.5
0.5
40.5
10.5
10.5
15.5
15.5
30.5
30.5
35.5
Frequency (GHz)
Frequency (GHz)
Input Return Loss (dB)
0 5 Return Loss (dB)
Return Loss (dB)
0 5 10 15 20 25 30 35
Output Return Loss (dB)
10 15 20 25 30 35 20.5 25.5 0.5 40.5 40 10.5 15.5 30.5 35.5 5.5
20.5
25.5
0.5
10.5
15.5
30.5
Frequency (GHz)
Frequency (GHz)
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Thinking RF solutions
35.5
40.5
40
5.5
35.5
40.5
0
60
5.5
5.5
P35-5142-000-200
Die Details
Die size: RF bond pads (1 & 8) All other bond pads Die thickness: 2.585 x 1.325mm 120 x 80µm 120 x 120µm 100µm
Pad Details
Pad 1 2 3 4 5 6 7 8 Function RF Input RF Output Vg1 Vg1 Gnd Vdd Vdd Vg2
MMICS
Bookham Technology plc Caswell Towcester Northamptonshire NN12 8EQ UK · Tel: +44 (0) 1327 356 789 · Fax: +44 (0) 1327 356 698 rfsales@bookham.com
Important Notice Bookham Technology has a policy of continuous improvement. As a result certain parameters detailed on this flyer may be subject to change without notice. If you are interested in a particular product please request the product specification sheet, available from any RF sales representative.
Handling and Assembly Information
Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Dice are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. GaAs Products from Caswell Technology's pHEMT Foundry process are 100µm thick and have through GaAs vias to enable grounding to the circuit. Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die. The surface to which the die are to be attached should be cleaned with a proprietary degreasing cleaner. Conductive epoxy mounting is recommended for the assembly of pHEMT circuits. Recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured at 150ºC for 1 hour in a nitrogen atmosphere. The epoxy should be applied sparingly to avoid encroachment of the epoxy on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. Eutectic mounting can also be used and entails the use of a gold-tin (AuSn) preform, approximately 0.001" thick, placed between the die and the attachment surface. The preferred method of mounting is the use of a machine such as a Mullins 8-140 die bonder. This utilises a heated collet and workstation with a facility for applying a scrubbing action to ensure total wetting and avoid the formation of voids. Dry nitrogen gas is directed across the work piece. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280ºC(Note: Gold Germanium with a higher melting temperature should be avoided, in particular for MMICs). The work station temperature should be 310ºC ± 10ºC. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. The strength of the bonding formed by this method will result in fracture of the die, rather than the bond under die strength testing. The P35-5142-000-200 amplifier die has gold bond pads. The recommended wire bonding procedure uses 25µm (0.001") 99.99% pure gold wire with 0.5-2% elongation. Thermo-compression wedge bonding is preferred though thermosonic wire bonding may be used providing the ultrasonic content of the bond is minimised. A work station temperature of 260ºC ± 10ºC with a wedge tip temperature of 120ºC ± 10ºC is recommended. The wedge force should be 45 ± 5 grams. Bonds should be made from the bond pads on the die to the package or substrate. The RF bond pads at the input and output are 80µm x 120µm; all other bond pads are 120µm x 120µm. The P35-5142-000-200 has been designed to include the inductance of a single 0.2mm length of 25µm bond wire at both the input and output, facilitating the integration of the die into a 50 environment.
Operating and Biasing of the P35-5142-000-200
The P35-5142-000-200 is an eight-stage cascode traveling wave amplifier. The drain bias (Vdd) is common to all stages and should be set to +10 volts. The first gate voltage (Vg1) is adjusted to set Id at 50% of Idss with the second gate voltage (Vg2) set to +2 volts. All DC bias supplies should be decoupled to ground using 220pF chip capacitors placed close to the chip with short bondwires to the amplifier bond pads and then further decoupled with 100nF capacitors at a suitable position.
Ordering Information
P35-5142-000-200
www.bookham.com
462/SM/02343/200 Issue 2
© Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
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