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Details, datasheet, quote on part number:P35-5146-000-200
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Datasheet text preview:
Data sheet
Engineering Datasheet
HEMT MMIC Broadband Amplifier, 30KHz - 20GHz
The P35-5146-000-200 is a high performance 30KHz 20GHz Gallium Arsenide broadband driver amplifier. This product is intended for use as an optical driver amplifier in fibre optic systems or as a medium power amplifier for broadband communication systems. The die is fabricated using Bookham Technology's 0.20µm gate length, pHEMT process and is fully protected using Silicon Nitride passivation for excellent performance and reliability.
Features · >22dBm Typical Saturated Output Power · High Gain 12dB Typical · Small 1.67 x 1.14mm Die Size · Flat Gain response ± 0.5dB to 10GHz Typical · Output Voltage typically >7.5V Peak-to Peak
www.bookham.com
Thinking RF solutions
P35-5146-000-200 Electrical Performance
Ambient Temperature 22±3ºC, Zo = 50, Vdd = 8V, Vg1 = -3.0V
Parameter Small Signal Gain Small Signal Gain Flatness Input Return Loss Output Return Loss Output Power @P1dB Saturated Output Power Drain Voltage Vdd Gate Voltage Vgg Total Current Idd Conditions 30KHz 20GHz 30KHz 20GHz 30KHz 20GHz 30KHz 20GHz Vdd 8V Min Typ 13 ±1 12 10 22 23 8.0 -3.0 100 Max Units dB dB dB dB dBm dBm V V mA
Notes
1. All Measurements RFOW
Typical RFOW Performance
Gain
16 14
Return Loss (dB) 0
Input Return Loss
12
5
Gain (dB)
10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
10
15
20 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
Output Return Loss
0 5
28 26
Output Power @ 1dB compression
Return Loss (dB)
10
Pout (dBm)
15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
24 22 20 18 2 4 6 Frequency (GHz) 8 10
S21 Phase
180 135
S21 (Degrees)
10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0
Deviation from Linear phase
Least Squares fit 1-10GHz
90 45 0 -45 -90 -135 -180 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
S21 (Degrees)
2
4
6
8 10 12 14 16 18 20
Frequency (GHz)
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Thinking RF solutions
P35-5146-000-200
The P35-5146-000-200 uses a fixed Vdd of +8V and a fixed Vgg of 3V, the input and output are both DC coupled. For low frequency operation an external bypass capacitors >0.1uF is required at pad 2. The drain supply Vdd needs to be applied via an external inductor
Chip Outline
MMICS
Bookham Technology plc Caswell Towcester Northamptonshire NN12 8EQ UK · Tel: +44 (0) 1327 356 789 · Fax: +44 (0) 1327 356 698 rfsales@bookham.com
Important Notice Bookham Technology has a policy of continuous improvement. As a result certain parameters detailed on this flyer may be subject to change without notice. If you are interested in a particular product please request the product specification sheet, available from any RF sales representative.
Die Details
Die size: RF bond pads (1 & 4): All other bond pads: Die Thickness: 1.67 x 1.14mm 120m x 120m 120m x 120m 100m
Pad Details
Pad 1 2 3 4 5 6 Function RF Input By Pass Capacitor Vdd (8V) RF Output Vgg (-3V) N/C
Ordering Information
P35-5146-000-200
www.bookham.com
462/SM/XXXXX/200 Issue 1
© Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
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