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Details, datasheet, quote on part number:FS0102B
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| Part: | FS0102B |
| Category: | Discrete => Thyristors => SCR (Silicon Controlled Rectifiers) => Sensitive Gate SCRs |
| Description: | IT(RMS) (A) = 0.8 ;; VDRM/VRRM(V) = 200 600 ;; Igt (µA) = 4 25 ;; Package = TO92 / RD26 |
| Company: | Fagor |
| Datasheet: | Download FS0102B datasheet File size : 148 kB |
| Request For quote: | Find where to buy FS0102B
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Datasheet text preview:
FS01...A/B
SENSITIVE GATE SCR
TO92 (Plastic)
RD26 (Plastic)
On-State Current 0.8 Amp Off-State Voltage 200 V ÷ 600 V Gate Trigger Current < 200 µA
K G A
A G K
FS01...A
FS01...B
This series of Silicon Controlled R ectifiers uses a high performance PNPN technology. This part is intended for general purpose applications where high gate sensitivity is required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS All Conduction Angle, TL = 55 ºC Half Cycle, = 180 º, TL = 55 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25º C tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. Min. 0.8 0.5 8 7 0.24 8 1 2 0.1 +125 +150 260 Max. Unit A A A A A2s V A W W ºC ºC ºC
IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld
SYMBOL
-40 -40 1.6 mm from case, 10s max.
PARAMETER Repetitive Peak Off State Voltage
CONDITIONS RGK = 1 K B 200
VOLTAGE D 400 M 600
Unit V
VDRM VRRM
Jul - 02
FS01...A/B
SENSITIVE GATE SCR
Electr ical Characteristics
SYMBOL PARAMETER CONDITIONS SENSITIVITY Unit
IGT IDRM / IRRM VTM VT(O) rd VGT VGD IH IL dv / dt di / dt Rth(j-l) Rth(j-a)
01 02 03 MIN 1 20 Gate Trigger Current VD = 12 VDC , RL = 140, Tj = 25 ºC MAX 20 200 200 = VDRM , RGK = 1K, Tj = 125 ºC MAX Off-State Leakage Current VD VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX On-state Voltage On-state Threshold Voltage Tj = 125 ºC MAX Tj = 125 ºC Dinamic Resistance MAX VD = 12 VDC , RL = 140, Tj = 25 ºC Gate Trigger Voltage MAX Gate Non Trigger Voltage VD = VDRM , RL = 3.3K, RGK = 1K, MIN Tj = 125 ºC Holding Current MAX IT = 50 mA , RGK = 1K, Tj = 25 ºC Latching Current MAX IG = 1 mA , RGK = 1K, Tj = 25 ºC Critical Rate of Voltage Rise VD = 0.67 x VDRM , RGK = 1K, Tj = 125 ºC MIN MIN 75 75 100
04 11 18 15 4 0.5 µA 50 25 5 µA 100 1 V 1.95 V 0.95 600 m 0.8 V 0.1 V 5 6 80 80 75 50 80 150 mA mA V/µs A/µs
Critical Rate of Current Rise IG = 2 x IGT Tr 100 ns, F = 60 Hz, Tj = 125 ºC Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient
ºC/W ºC/W
PART NUMBER INFORMATION
F
FAGOR SCR CURRENT
S
01
01
B
A
00
BU
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Jul - 02
FS01...A/B
SENSITIVE GATE SCR
Fig. 1: Maximum average power dissipation versus average on-state current P (W) 1
360 º Rth (j-l)
Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T lead). P (W) 1 T lead (ºC) -45
0.8
DC
0.8
Rth (j-a)
-65
0.6
= 180 º = 120 º
0.6 -85 0.4
0.4
= 90 º
0.2
= 60 º = 30 º IT(AV)(A)
0.2
Tamb (ºC)
-105
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0 0 20 40 60 80
-125 100 120 140
Fig. 3: Average on-state current versus lead temperature I T(AV) (A) 1
DC
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00
0.8
0.6
= 180 º
0.10
0.4
0.2
T lead (ºC) tp (s)
0 0 20 40 60 80 100 120 140
0.01 1E-3
1E-2
1E-1
1E+0
1E+1 1E+2 5E+2
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 10.0 9.0 8.0 7.0 6.0
Igt
Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 8
Tj initial = 25 ºC
Ih (Tj) Ih (Tj = 25 ºC)
7 6 5 4 3 2
Ih
5.0 4.0 3.0 2.0 1.0
Tj (ºC)
1
Number of cycles
0.0 -40 -20 0 20 40 60 80 100 120 140
0 1 10 100 1,000
Jul - 02
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