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Details, datasheet, quote on part number:FS0118N
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| Part: | FS0118N |
| Category: | Discrete => Thyristors => SCR (Silicon Controlled Rectifiers) => Surface Mounted SCRs |
| Description: | IT(RMS) (A) = 0.8 ;; VDRM/VRRM(V) = 200 600 ;; Igt = 4 25 µA ;; Package = SOT223 |
| Company: | Fagor |
| Datasheet: | Download FS0118N datasheet File size : 151 kB |
| Request For quote: | Find where to buy FS0118N
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Datasheet text preview:
FS01...N
SURFACE MOUNT SCR
SOT223 (Plastic)
On-State Current 0.8 Amp Gate Trigger Current < 200 µA Off-State Voltage 200 V ÷ 600 V
These series of Silicon Controlled R ectifiers uses a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS All Conduction Angle, Ttab = 70 ºC Half Cycle, = 180 º, Ttab = 70 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25 ºC tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. Min. 0.8 0.5 8 7 0.24 8 1 2 0.1 +125 +150 260 Max. Unit A A A A A2s V A W W ºC ºC ºC
IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld
-40 -40 1.6 mm from case, 10s max.
SYMBOL
PARAMETER Repetitive Peak Off State Voltage
CONDITIONS RGK = 1 K B 200
VOLTAGE D 400 M 600
Unit V
VDRM VRRM
Jul - 02
FS01...N
SURFACE MOUNT SCR
Electrical Characteristics
SYMBOL PARAMETER CONDITIONS SENSITIVITY Unit
IGT IDRM / IRRM VTM VT(O) rd VGT VGD IH IL dv / dt di / dt Rth(j-l) Rth(j-a)
01 02 03 MIN 1 20 Gate Trigger Current VD = 12 VDC , RL = 140, Tj = 25 ºC MAX 20 200 200 Off-State Leakage Current VD = VDRM , RGK = 1K, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX On-state Voltage On-state Threshold Voltage Tj = 125 ºC MAX Tj = 125 ºC Dinamic Resistance MAX VD = 12 VDC , RL = 140, Tj = 25 ºC Gate Trigger Voltage MAX Gate Non Trigger Voltage VD = VDRM , RL = 3.3K, RGK = 1K, MIN Tj = 125 ºC Holding Current MAX IT = 50 mA , RGK = 1K, Tj = 25 ºC Latching Current MAX IG = 1 mA , RGK = 1K, Tj = 25 ºC Critical Rate of Voltage Rise VD = 0.67 x VDRM , RGK = 1K, Tj = 125 ºC MIN MIN 75 75 100
04 11 18 15 4 0.5 µA 50 25 5 µA 100 1 V 1.95 V 0.95 600 m 0.8 V 0.1 V 5 6 80 80 75 50 80 150 mA mA V/µs A/µs
Critical Rate of Current Rise IG = 2 x IGT Tr 100 ns, F = 60 Hz, Tj = 125 ºC Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient
ºC/W ºC/W
PART NUMBER INFORMATION
F
FAGOR SCR CURRENT
S
01
01
B
N
00
RB
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Jul - 02
FS01...N
SURFACE MOUNT SCR
Fig. 1: Maximum average power dissipation versus average on-state current P (W) 1
360 º
Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T tab). P (W) 1 T tab (ºC) -95 -100
Rth (j-a)
0.8
DC
0.8
-105 0.6 -110 0.4 -115 0.2 -120
Tamb (ºC)
0.6
= 180 º = 120 º
0.4
= 90 º
0.2
= 60 º = 30 º IT(AV)(A)
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0 0 20 40 60 80
-125 100 120 140
Fig. 3: Average on-state current versus tab temperature I T(AV) (A) 1
DC
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00
0.8
0.6
= 180 º
0.10
Standard foot print, e (Cu) = 35 µm
0.4
0.2
Ttab (ºC) tp (s)
0 0 20 40 60 80 100 120 140
0.01 1E-3
1E-2
1E-1
1E+0
1E+1 1E+2 5E+2
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 10.0 9.0 8.0 7.0 6.0
Igt
Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 8
Tj initial = 25 ºC
Ih (Tj) Ih (Tj = 25 ºC)
7 6 5 4 3 2
Ih
5.0 4.0 3.0 2.0 1.0
Tj (ºC)
1
Number of cycles
0.0 -40 -20 0 20 40 60 80 100 120 140
0 1 10 100 1,000
Jul - 02
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