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Details, datasheet, quote on part number:FS0201N
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| Part: | FS0201N |
| Category: | Discrete => Thyristors => SCR (Silicon Controlled Rectifiers) => Surface Mounted SCRs |
| Description: | IT(RMS) (A) = 1.25 ;; VDRM/VRRM(V) = 200 800 ;; Igt = 20 200 µA ;; Package = SOT223 |
| Company: | Fagor |
| Datasheet: | Download FS0201N datasheet File size : 148 kB |
| Request For quote: | Find where to buy FS0201N
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Datasheet text preview:
FS02...N
SURFACE MOUNT SCR
SOT223 (Plastic)
On-State Current 1.25 Amp Gate Trigger Current < 200 µA Off-State Voltage 200 V ÷ 800 V
These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER On-state Current* Average On-state Current* Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS Half Cycle, = 180 º, Ttab = 95 ºC Half Cycle, = 180 º, Ttab = 95 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25 ºC tp = 10ms, Half Cycle IGR = 10 µA, Tj = 25 ºC 20 µs max. 20 µs max. 20 ms max. Min. 1.25 0.8 25 22.5 2.5 8 1.2 3 0.2 +125 +150 260 Max. Unit A A A A A2s V A W W ºC ºC ºC
IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld
-40 -40 10s max.
* with 5 cm2 copper (e= 35µm) surface under tab.
SYMBOL
PARAMETER Repetitive Peak Off State Voltage
CONDITIONS RGK = 1 K B 200
VOLTAGE D 400 M 600 N 800
Unit V
VDRM VRRM
Jun - 02
FS02...N
SURFACE MOUNT SCR
Electr ical Characteristics
SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage On-state Threshold Voltage Dinamic Resistance Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Cr itical Rate of Voltage Rise CONDITIONS MIN VD = 12 VDC , RL = 140, Tj = 25 ºC MAX VD = VDRM , RGK = 1K, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX Tj = 125 ºC MAX Tj = 125 ºC MAX VD = 12 VDC , RL = 140, Tj = 25 ºC MAX VD = VDRM , RL = 3.3K, RGK = 1K, MIN Tj = 125 ºC IT = 50 mA , RGK = 1K, Tj = 25 ºC IG = 1 mA , RGK = 1K, Tj = 25 ºC VD = 0.67 x VDRM , RGK = 1K, Tj = 125 ºC MAX MAX MIN MIN 01 1 20 SENSITIVITY 04 15 50 02 200 500 5 1.45 0.9 150 0.8 0.1 5 6 15 15 50 25 60 10 20 03 20 200 Unit µA µA V V m V V mA mA V/µs A/µs
IGT IDRM / IRRM VTM VT(O) rd VGT VGD IH IL dv / dt di / dt Rth(j-l) Rth(j-a)
Cr itical Rate of Current Rise IG = 2 x IGT Tr 100 ns, F = 60 Hz, Tj = 125 ºC Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient
ºC/W ºC/W
PART NUMBER INFORMATION
F
FAGOR SCR CURRENT
S
02
01
B
N
00
RB
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Jun - 02
FS02...N
SURFACE MOUNT SCR
Fig. 1: Maximum average power dissipation versus average on-state current P (W) 1.4
360 º
Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T tab). P (W) 1.4
Rth (j-l)
T tab (ºC) -85
1.2 1.0 0.8 0.6 0.4
1.2
DC
1.0
Rth (j-a) = 180 º = 120 º = 90 º
-95
0.8 -105 0.6 0.4 -115
= 60 º
0.2 0.0 0
= 30 º
0.2 IT(AV)(A) 0.0 0 20 40 60 80 -125 Tamb (ºC) 100 120 140
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Fig. 3: Average on-state current versus tab temperature I T(AV) (A) 1.6
DC
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 10.0 9.0 8.0 7.0 6.0
Igt = 180 º
0.10
Standard foot print, e (Cu) = 35 µm
T lead (ºC)
0.01 1E-3
tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 25
Tj initial = 25 ºC
Ih (Tj) Ih (Tj = 25 ºC)
20
15
5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj (ºC) 0 1 10 100 1000 Number of cycles
Ih
10
5
Jun - 02
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