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Details, datasheet, quote on part number:FS0202A
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| Part: | FS0202A |
| Category: | Discrete => Thyristors => SCR (Silicon Controlled Rectifiers) => Sensitive Gate SCRs |
| Description: | IT(RMS) (A) = 1.25 ;; VDRM/VRRM(V) = 200 800 ;; Igt (µA) = 20 200 ;; Package = TO92 / RD26 |
| Company: | Fagor |
| Datasheet: | Download FS0202A datasheet File size : 146 kB |
| Request For quote: | Find where to buy FS0202A
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Datasheet text preview:
FS02...A/B
SENSITIVE GATE SCR
TO92 (Plastic) RD26 (Plastic)
On-State Current 1.25 Amp Off-State Voltage 200 V ÷ 800 V
K G A A G K
Gate Trigger Current < 200 µA
FS02...A
FS02...B
These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS All Conduction Angle, TL = 60 ºC Half Cycle, = 180 º, TL = 60 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25º C tp = 10ms, Half Cycle IGR = 10 µA, Tj = 25 ºC 20 µs max. 20 µs max. 20ms max. Min. 1.25 0.8 25 22.5 2.5 8 1.2 3 0.2 +125 +150 260 Max. Unit A A A A A2s V A W W ºC ºC ºC
IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld
-40 -40 1.6 mm from case, 10s max.
SYMBOL
PARAMETER Repetitive Peak Off State Voltage
CONDITIONS RGK = 1 K B 200
VOLTAGE D 400 M 600 N 800
Unit V
VDRM VRRM
Jun - 02
FS02...A/B
SENSITIVE GATE SCR
Electr ical Characteristics
SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage On-state Threshold Voltage Dinamic Resistance Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Cr itical Rate of Voltage Rise CONDITIONS MIN MAX VD = VDRM , RGK = 1K, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX Tj = 125 ºC MAX Tj = 125 ºC MAX VD = 12 VDC , RL = 140, Tj = 25 ºC MAX VD = VDRM , RL = 3.3K, RGK = 1K, MIN Tj = 125 ºC VD = 12 VDC , RL = 140, Tj = 25 ºC IT = 50 mA , RGK = 1K, Tj = 25 ºC IG = 1 mA , RGK = 1K, Tj = 25 ºC VD = 0.67 x VDRM , RGK = 1K, Tj = 125 ºC MAX MAX MIN MIN 01 1 20 SENSITIVITY 04 15 50 02 200 500 5 1.45 0.9 200 0.8 0.1 5 6 15 15 50 60 150 10 20 03 20 200 Unit µA µA V V m V V mA mA V/µs A/µs
IGT IDRM / IRRM VTM VT(O) rd VGT VGD IH IL dv / dt di / dt Rth(j-l) Rth(j-a)
Cr itical Rate of Current Rise IG = 2 x IGT Tr 100 ns, F = 60 Hz, Tj = 125 ºC Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient
ºC/W ºC/W
PART NUMBER INFORMATION
F
FAGOR SCR CURRENT
S
02
01
B
A
00
BU
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Jun - 02
FS02...A/B
SENSITIVE GATE SCR
Fig. 1: Maximum average power dissipation versus average on-state current P (W) 1.2
360 º
Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tlead). P (W) 1.2
Rth (j-l)
Tlead (ºC) -50
1.0 0.8
DC
1.0
Rth (j-a)
-70
0.8
= 180 º
0.6 0.4 0.2
= 30 º
= 120 º = 90 º = 60 º
0.6 0.4 0.2 IT(AV)(A) 0.0 0 20 40 60 80
-90
-110 Tamb (ºC) 100 120 140
0.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Fig. 3: Average on-state current versus lead temperature I T(AV) (A) 1.4
DC
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00
1.2 1.0 0.8
= 180 º
0.10
0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 10.0 9.0 8.0 7.0 6.0
Igt
T lead (ºC)
0.01 1E-3
tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 25
Tj initial = 25 ºC
Ih (Tj) Ih (Tj = 25 ºC)
20
15
5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj (ºC) 0 1 10 100 Number of cycles 1000
Ih
10
5
Jun - 02
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