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Details, datasheet, quote on part number:FS1210DH
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| Part: | FS1210DH |
| Category: | Discrete => Thyristors => SCR (Silicon Controlled Rectifiers) => Standard SCRs |
| Description: | IT(RMS) (A) = 12.0 ;; VDRM/VRRM(V) = 200 600 ;; Igt (mA) = 0.5 5 ;; Package = TO220AB |
| Company: | Fagor |
| Datasheet: | Download FS1210DH datasheet File size : 134 kB |
| Request For quote: | Find where to buy FS1210DH
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Datasheet text preview:
FS12...H
STANDARD SCR
TO220-AB
On-State Current 12 Amp Gate Trigger Current > 0.5 mA to < 25 mA Off-State Voltage 200 V ÷ 600 V
These series of Silicon Controlled R ectifier use a high performance PNPN technology.
K A G
These parts are intended for general purpose high current applications where moderate gate insensitivity is required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS 180º Conduction Angle, Tc = 110 ºC Half Cycle, = 180 º, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. -40 -40 10s max. Min. Max. 12 8 154 140 98 8 4 10 1 +125 +150 260 Unit A A A A A 2s V A W W ºC ºC ºC
IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld
SYMBOL
PARAMETER Repetitive Peak Off State Voltage
CONDITIONS RGK = 1 K B 200
VOLTAGE D 400 M 600
Unit V
VDRM VRRM
Dec - 02
FS12...H
STANDARD SCR
Electrical Characteristics
SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Thermal Resistance Junction-Case for DC Thermal Resistance Junction-Amb (S = 0.5 cm 2) Threshold Voltage Dynamic resistance Tj = 125 ºC Tj = 125 ºC MAX MAX CONDITIONS MIN MAX VD = VDRM , RGK = 220 Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 24 Amp, tp = 380 µs, Tj = 25 ºC MAX VD = 12 VDC , RL = 33, Tj = 25 ºC MAX VD = VDRM , RL = 3.3K, RGK = 220, MIN Tj = 125 ºC VD = 12 VDC , RL = 33. Tj = 25 ºC IT = 500 mA , Gate open IG = 1.2 IGT VD = 0.67 x VDRM , Gate open IG = 2 x IGT Tr 100 ns, F = 60 Hz, Tj = 125 ºC MAX MAX MIN MIN SENSITIVITY 08 0.5 5 09 2 15 2 5 1.6 1.3 0.2 30 60 200 50 1.3 60 0.85 30 10 2 25 Unit mA mA µA V V V 40 60 250 mA mA V/µs A/µs ºC/W ºC/W V m
IGT IDRM / IRRM VTM VGT VGD IH IL dv / dt di / dt Rth(j-c) Rth(j-a)
15 30 50
Vt0 Rd
PART NUMBER INFORMATION F
FAGOR SCR CURRENT
S
12
09
B
H
00
TU
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Dec - 02
FS12...H
STANDARD SCR
Fig. 1: Maximum average power dissipation versus average on-state current. P (W) 16 14 12 10 8 6 4 2 0 IT(av)(A) 0 1 2 3 4 5 6 7 8 9 10 Fig. 2: Average and D.C. on-state current versus case temperature. IT(av)(A) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0
Tc (ºC) 25 50 75 100 125
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. K = [Zth(j-c) / Rth (j-c)] 1.0
Fig. 4: Relative variation of gate trigger current and holding current versus junction temperature. IGT, IH (Tj) / IGT, IH (Tj = 25 ºC) 2.0 1.8 1.6
IGT
0.5
1.4 1.2
IH
1.0 0.8 0.2 0.6 0.4 0.2 0.1 1E-3 tp (s) 1E-2 1E-1 1E+0 0.0 Tj (ºC) -40 -20 0 20 40 60 80 100 120 140
Fig. 5: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 160
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s)
Tj initial = 25 ºC
140 120 100 80
Tj initial = 25 ºC F = 50 Hz
1000
ITSM
I2 t
60 40 20 0 1 10 100 1000 Number of cycles
100
10 1 10
tp(ms)
Dec - 02
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