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Details, datasheet, quote on part number:FT0104MA
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| Part: | FT0104MA |
| Category: | Discrete => Thyristors => Triacs => Logic Level TRIACs |
| Description: | IT(RMS) (A) = 1.0 ;; VDRM/VRRM(V) = 200 400 ;; Igt (mA) = 3 - 3 - 3 - 3 ;; Package = TO92 |
| Company: | Fagor |
| Datasheet: | Download FT0104MA datasheet File size : 133 kB |
| Request For quote: | Find where to buy FT0104MA
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Datasheet text preview:
FT01...A
LOGIC LEVEL TRIAC
TO92 (Plastic)
On-State Current 1.0 Amp
Gate Trigger Current < 10 mA
Off-State Voltage 200 V ÷ 400 V ( 02, 03) 200 V ÷ 600 V (04, 05, 07, 09)
MT1 G MT2
The FT01 series of TRIACs uses a high performance PNPN technology. These part are intended for general purpose applications where logic compatible gate sensitivity is required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Peak Gate Dissipation Gate Dissipation Critical rate of rise of on-state current Operating Temperature Storage Temperature Soldering Temperature PARAMETER Repetitive Peak Off State Voltage B 200 CONDITIONS All Conduction Angle, TL = 70 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10 ms, Half Cycle 20 µs max. 20 µs max. 20 ms max. IG = 2 x IGT Tr 100 ns, F = 120 Hz Tj = 125 ºC -40 -40 1.6 mm from case, 10s max. VOLTAGE D 400 M* 600 Min. Max. 1.0 8.5 8 0.35 1 2 0.1 20 +125 +150 260 Unit A A A A2s A W W A/µs ºC ºC ºC Unit V
IT(RMS) ITSM ITSM I2t IGM PGM PG(AV) di/dt Tj Tstg Tsld
SYMBOL
VDRM VRRM
* 04, 05, 07, 09 sensitivities
Apr - 03
FT01...A
LOGIC LEVEL TRIAC
Electr ical Characteristics
SYMBOL PARAMETER Gate Trigger Current CONDITIONS Quadrant SENSITIVITY Unit
IGT
VD = 12 VDC , RL = 30, Tj = 25 ºC Tj = 125 ºC Tj = 25 ºC
IDRM /IRRM Off-State Leakage Current VD = VDRM , Vto Rd VTM * VGT VGD IH* IL
Threshold Voltage Dynamic Resistance On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current VR = VRRM , Tj = 125 ºC Tj = 125 ºC
IT = 1.1 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 30, Tj = 25 ºC VD = VDRM , RL = 3.3K, Tj = 125 ºC IT = 50 mA Tj = 25 ºC IG = 1.2 IGT, Tj = 25 ºC
dv / dt* Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open
Tj = 125 ºC
02 03 04 05 07 Q1÷Q3 MAX 3 3 5 5 5 Q4 MAX 3 5 57 MAX 0.5 MAX 5 MAX 0.95 MAX 400 MAX 1.5 Q1÷Q4 MAX 1.3 Q1÷Q4 MIN 0.2 10 MAX 7 Q1,Q3,Q4 MAX 7 10 Q2 MAX 14 20 20 MIN 10 MIN 0.5 1
09 10 mA 10 mA µA V m V V V mA 25 mA 25 50 V/µs 2 V/µs
(dv/dt)c* Critidal rise rate of
commutating off-state Voltage
(di/dt)c= 0.44 A/ms
Tj = 110 ºC
Rth(j-l) Rth(j-a)
Thermal Resistance Junction-Leads for AC Thermal Resistance Junction-Ambient
60 150
ºC/W
ºC/W
(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION F
FAGOR TRIAC CURRENT
T
01
05
B
A
00
BU
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Apr - 03
FT01...A
LOGIC LEVEL TRIAC
Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle) P (W) 1.25 1.25 Fig. 2: RMS on-state current versus ambient temperature (full cycle) I T(RMS) (A)
1.0
1.0
0.75
0.75
0.50
0.50
0.25
0.25
0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
IT(RMS)(A)
0.0
T lead (ºC) 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 3: RMS on-state current versus ambient temperature (full cycle) I T(RMS) (A) 1
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00
0.8
0.6 0.10 0.4
0.2
0
T amb (ºC) 0 10 20 30 40 50 60 70 80 90 100 110 120 130
0.01 1E-3
tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 5: Relative variation of gate trigger current , holding current and latching current versus junction temperature. Igt , Ih , Il (Tj) Igt , Ih , Il (Tj = 25 ºC) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Tj (ºC) -40 -20 0 20 40 60 80 100 120 140
Ih & Il Igt
Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 8
Tj initial = 25 ºC
7 6 5 4 3 2 1 1 10 100 1000 Number of cycles
Apr - 03
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