The FT01 series of TRIACs uses a high performance PNPN technology. These parts are intended for general purpose applications where logic compatible gate sensitivity is required using surface mount technology.
SYMBOL PARAMETER RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Peak Gate Dissipation Gate Dissipation Critical rate of rise of on-state current Operating Temperature Storage Temperature Soldering Temperature CONDITIONS All Conduction Angle, Tab 90 ºC Half Cycle, 60 Hz Half Cycle, = 10 ms, Half Cycle 20 µs max. 20 µs max. 20 ms max. 2 x IGT Tr 100 ns, 1.6 mm from case, 10s max. Min. Max. Unit A W A/µs ºC
IT(RMS) ITSM I2t IGM PGM PG(AV) di/dt Tj Tstg Tsld
SYMBOL PARAMETER Gate Trigger Current CONDITIONS = 12 VDC 25 ºC Quadrant SENSITIVITY Unit
IDRM /IRRM Off-State Leakage Current VD = VDRM , Vto Rd VTM * VGT VGD IH* IL
Threshold Voltage Dynamic Resistance On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current VR = VRRM 125 ºC
dv / dt* Critical Rate of Voltage Rise 0.67 x VDRM , Gate open
Thermal Resistance Junction-Leads for AC Thermal Resistance Junction-Ambient
For either polarity of electrode MT2 voltage with reference to electrode MT1.
Fig. 1: Maximum power dissipation versus RMS on-state current P (W) 1.6 1.4
Fig. 2: Correlation between maximum power dissipation and maximum allowable temperature (Tamb and T tab). P (W) 1.6
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00
Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 8