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Details, datasheet, quote on part number:FT0808I
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| Part: | FT0808I |
| Category: | Discrete => Thyristors => Triacs => Logic Level TRIACs |
| Description: | IT(RMS) (A) = 8.0 ;; VDRM/VRRM(V) = 200 600 ;; Igt (mA) = 10 - 10 - 10 ;; Package = Ipak |
| Company: | Fagor |
| Datasheet: | Download FT0808I datasheet File size : 143 kB |
| Request For quote: | Find where to buy FT0808I
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Datasheet text preview:
FT08...I
LOGIC LEVEL TRIAC
IPAK (Plastic)
On-State Current 8 Amp
Gate Trigger Current < 5 mA to < 10 mA
Off-State Voltage 200 V ÷ 600 V MT2
MT1 MT2 G
This series of TRIACs uses a high performance PNPN technology. These devices are intended for AC control applications using surface mount technology. The high commutation performances combined with high sensitivity, make them perfect in all applications like solid state relays, home appliances, power tools, small motor drives...
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Peak Gate Dissipation Gate Dissipation Critical rate of rise of on-state current Operating Temperature Range Storage Temperature Range Lead Temperature for soldering CONDITIONS All Conduction Angle, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10 ms, Half Cycle 20 µs max. 20 µs max. 20 ms max. IG = 2 x IGT Tr 100 ns, F = 120 Hz Tj = 125 ºC Min. 8 84 80 36 4 10 1 20 -40 -40 10s max. +125 +150 260 Max. Unit A A A A 2s A W W A/µs ºC ºC ºC
IT(RMS) ITSM ITSM I2t IGM PGM PG(AV) di/dt Tj Tstg TL
SYMBOL
PARAMETER Repetitive Peak Off State Voltage B 200
VOLTAGE D 400 M 600
Unit V
VDRM VRRM
Jul - 02
FT08...I
LOGIC LEVEL TRIAC
Electr ical Characteristics
SYMBOL PARAMETER Gate Trigger Current CONDITIONS Quadrant Q1÷Q3 MAX Q4 MAX MAX MAX Q1÷Q3 MAX Q1÷Q3 MIN MAX Q1,Q3 MAX Q2 MAX MIN MIN MIN MIN SENSITIVITY 07 5 7 1 5 1.55 1.3 0.2 10 10 15 20 3.5 1.8 15 20 30 100 5.4 2.8 08 10 Unit mA mA µA V V V mA mA V/µs A/ms
IGT
VD = 12 VDC , RL = 33 Tj = 25 ºC VR = VDRM , VR = VRRM , IT = 11 Amp, tp = 380 µs, VD = 12 VDC , RL = 33, VD = VDRM , RL = 3.3K, IT = 100 mA , Gate open, IG = 1.2 IGT, Tj = 25 ºC Tj = 125 ºC Tj = 25 ºC Tj = 25 ºC Tj = 25 ºC Tj = 125 ºC Tj = 25 ºC
IDRM /IRRM Off-State Leakage Current VTM VGT VGD IH* IL
On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current
dv / dt* Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open
Tj = 125 ºC
(di/dt)c* Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs
(dv/dt)c= 15 V/µs without snubber
Tj = 125 ºC Tj = 125 ºC Tj = 125 ºC
Rth(j-c) Rth(j-a)
Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient
1.6 100
ºC/W ºC/W
(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION F
FAGOR TRIAC CURRENT
T
08
07
B
I
00
TU
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Jul - 02
FT08...I
LOGIC LEVEL TRIAC
Fig. 1: Maximum power dissipation versus average on-state current P (W) 10
= 180 º
Fig. 2: Average and DC on-state current versus case temperature I T(RMS) (A) 9 DC 8 7 6
= 180 º
8
6 5 4 4 3 2
180 º
2 1 IT(av)(A) 0 0 25 50 75 100 125 Tc (ºC) 8
0 0 1 2 3 4 5 6 7
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration K = [Zth(j-c) / Rth (j-c)] 1.0
Fig. 4: Relative variation of gate trigger current and holding current versus junction temperature IGT, IH, IL (Tj) / IGT, IH, IL (Tj = 25 ºC) 2.0
1.6 0.5 1.2
IGT
0.8 0.2 0.4 tp (s) 1E-2 1E-1 1E+0
IH & IL
0.1 1E-3
0.0 -40 -20 0 20 40 60 80 100 120 140
Tj (ºC)
Fig. 5: Non repetitive surge peak on-state current versus number of cycles I TSM (A) 80
Tj initial = 25 ºC
Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 500
Tj initial = 25 ºC
70 60 50 40 30 20 10 0 1 10 100 1000 Number of cycles 10 1 2 5 10 tp(ms)
I2 t ITSM
100
Jul - 02
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