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Details, datasheet, quote on part number:FT1003BH
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| Part: | FT1003BH |
| Category: | Discrete => Thyristors => Triacs => High Commutation TRIACs |
| Description: | IT(RMS) (A) = 10.0 ;; VDRM/VRRM(V) = 200 600 ;; Igt (mA) = 25 - 25 - 25 ;; Package = TO220AB |
| Company: | Fagor |
| Datasheet: | Download FT1003BH datasheet File size : 148 kB |
| Request For quote: | Find where to buy FT1003BH
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Datasheet text preview:
FT10...H
HIGH COMMUTATION TRIAC
TO220-AB
On-State Current 10 Amp Gate Trigger Current 25 mA to 50 mA Off-State Voltage 200 V ÷ 600 V
MT2
MT1 MT2 G
T h i s series of TRIACs uses a high p e r f o r m a n c e PNPN technology. T h e se parts are intended for general p u r p o se AC switching applications with h i g h ly inductive loads.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Average Gate Power Dissipation Critical rate of rise of on-state current Operating Temperature Storage Temperature CONDITIONS All Conduction Angle, TC = 105 ºC Full Cycle, 60 Hz Full Cycle, 50 Hz tp = 10 ms, Half Cycle 20 µs max. Tj =125ºC Tj =125ºC IG = 2x IGT, tr 100ns f= 120 Hz, Tj =125ºC Min. 10 105 100 55 4 1 50 -40 -40 +125 +150 Max. Unit A A A A2s A W A/µs ºC ºC
IT(RMS) ITSM ITSM I2t IGM PG(AV) di/dt Tj Tstg
SYMBOL
PARAMETER Repetitive Peak Off State Voltage B 200
VOLTAGE D 400 M 600
Unit V
VDRM VRRM
Jun - 02
FT10...H
HIGH COMMUTATION TRIAC
Electr ical Characteristics
SYMBOL PARAMETER CONDITIONS Quadrant SENSITIVITY 11 25 14 35 1 5 0.85 40 1.55 1.3 0.2 16 50 Unit mA mA µA V m V V V mA mA
IGT (1) Gate Trigger Current IDRM /IRRM Off-State Leakage Current Vto (2) Rd(2) VTM (2) VGT VGD IH (2) IL
Threshold Voltage Dynamic Resistance On-state Voltage Gate Trigger Voltage Gate Non Trigger Current Holding Current Latching Current
VD = 12 VDC , RL = 33, Tj = 25 ºC VD = VDRM , Tj = 125 ºC VR = VRRM , Tj = 25 ºC Tj = 125 ºC Tj = 125 ºC
dv / dt (2) Critical Rate of Voltage Rise
Q1÷Q3 MAX MAX MAX MAX MAX IT = 14 Amp, tp = 380 µs, Tj = 25 ºC MAX VD = 12 VDC , RL = 33, Tj = 25 ºC Q1÷Q3 MAX VD = VDRM , RL = 3.3K, Tj = 125 ºC Q1÷Q3 MIN IT = 500 mA , Gate open, Tj = 25 ºC MAX 25 IG = 1.2 IGT, Tj = 25 ºC Q1,Q3 MAX 40 Q2 MAX 50 MIN 200 VD = 0.67 x VDRM , Gate open Tj = 125 ºC MIN MIN MIN 5
35 50 50 70 60 80 500 1000 V/µs 5.5 1.5 60 9 A/ms
(dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs
Rth(j-c) Rth(j-a)
Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient
Tj = 125 ºC (dv/dt)c= 10 V/µs Tj = 125 ºC without snubber Tj = 125 ºC for AC 360º conduction angle
ºC/W ºC/W
(1) Minimum IGT is guaranted at 5% of IGT max. (2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION F
FAGOR TRIAC CURRENT
T
10
11
B
H
00
TU
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Jun - 02
FT10...H
HIGH COMMUTATION TRIAC
Fig. 1: Maximum power dissipation versus RMS on-state curren (full cycle). P (W) 16 14 12 10 8 6 4 2 0 IT(RMS)(A) 0 1 2 3 4 5 6 7 8 9 10 11 12 Fig. 2: RMS on-state current versus case temperature (full cycle). IT(RMS)(A) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0
Tc (ºC) 25 50 75 100 125
Fig. 3: : Relative variation of thermal impedance versus pulse duration. K=[Zth / Rth] 1E+0
Zth(j-c)
Fig. 4: On-state characteristics (maximum values) ITM (A) 100
Tj max
1E-1
Zth(j-a)
10
Tj = 25 ºC
Tj max Vto = 0.85 V Rt = 35m
1E-2 1E-3
tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. I TSM (A), I2 t (A2s)
dl/dt limitation 50A/µs
VTM (V)
Fig. 5: Surge peak on-state current versus number of cycles I TSM (A) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 1
Tj initial = 25 ºC
t=20ms One cycle
1000
ITSM
Non repetitive Tj initial = 25 ºC It
2
100
Repetitive Tc = 90 ºC
Number of cycles 10 100 1000
10 0.01
0.10
1.00
tp (ms) 10.00
Jun - 02
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