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Details, datasheet, quote on part number:EL-1K3
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Datasheet text preview:
Infrared Emitting Diodes(GaAs)
K DNH OESI
EL-1K3
DIMENSIONS
The EL-1K3 is a high-power GaAs IRED mounted in d u r a b l e , hermetically sealed TO-18 metal can package, which provides years of reliable performance e v e n under demanding conditions such as use outdoors.
(Unit : mm)
FEATURES
¶UWide beam angle ¶U urable D ¶UHigh reliability in demanding environments
APPLICATIONS
¶UOptical emitters ¶UOptical switches ¶USmoke sensors
MAXIMUM RATINGS
Item
Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°...) 5
Symbol
VR F I F IP PD Topr. Tstg. Tsol.
Rating
5 100 1 200 -30~+100 -55~+125 260
Unit
V mA A mW °... °... °...
*1. pulse width £tw ßZ100period £ 10msec. sec. ·Ï T= *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle
(Ta=2°...) 5
Symbol
VF R I Ct PO ·Îp ··Î °,·Ë
Conditions
F I= 1 0 0 m A VR=5V f=1MHz F I =100mA F I= 1 0 0 m A F I =100mA
Min.
Typ.
1.35 25 4.0 940 50 °æ 6 3
Max.
1.7 10
Unit.
V ·A Ï pF mW/sr nm nm deg.
2.2
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Infrared Emitting Diodes(GaAs)
EL-1K3
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
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