Details and datasheet on part: EL-1K3

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Part: EL-1K3

Category:
Discrete
-> Diodes & Rectifiers

Description: Infrared Emitting Diodes ( GAAS )

Company: Kodenshi

Datasheet: Download EL-1K3 datasheet File size : 65 kB

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Datasheet text preview:
Infrared Emitting Diodes(GaAs)

K DNH OESI

EL-1K3
DIMENSIONS
The EL-1K3 is a high-power GaAs IRED mounted in d u r a b l e , hermetically sealed TO-18 metal can package, which provides years of reliable performance e v e n under demanding conditions such as use outdoors.
(Unit : mm)

FEATURES
¶UWide beam angle ¶U urable D ¶UHigh reliability in demanding environments

APPLICATIONS
¶UOptical emitters ¶UOptical switches ¶USmoke sensors

MAXIMUM RATINGS
Item
Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp.

(Ta=2°...) 5

Symbol
VR F I F IP PD Topr. Tstg. Tsol.

Rating
5 100 1 200 -30~+100 -55~+125 260

Unit
V mA A mW °... °... °...

*1. pulse width £tw ßZ100period £ 10msec. sec. ·Ï T= *2. For MAX.5 seconds at the position of 2 mm from the package

ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle

(Ta=2°...) 5

Symbol
VF R I Ct PO ·Îp ··Î °,·Ë

Conditions
F I= 1 0 0 m A VR=5V f=1MHz F I =100mA F I= 1 0 0 m A F I =100mA

Min.

Typ.
1.35 25 4.0 940 50 °æ 6 3

Max.
1.7 10

Unit.
V ·A Ï pF mW/sr nm nm deg.

2.2

- 1-

Infrared Emitting Diodes(GaAs)

EL-1K3

Power dissipation Vs. Ambient temperature

Radiant intensity Vs. Forward current

Relative radiant intensity Vs. Ambient temperature

Relative intensity Vs. Wavelength

Forward current vs. Forward voltage

Radiant Pattern

Relative radiant intensity Vs. Distance

- 2-

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