|
Details, datasheet, quote on part number:EL-302
| |
Datasheet text preview:
Infrared Emitting Diodes(GaAs)
K DNH OESI
EL-302 °§EL-303
DIMENSIONS
The EL-302 a high-power GaAs IRED mounted in a clear sidelooking package, is compact, low profile, and easy to mount.
(Unit : mm)
FEATURES
¶U ompact C ¶ULow profile package ¶U ow-cost L ¶USidelooking plastic package
APPLICATIONS
¶U hotointerrupters P ¶UOptical switches ¶U oys T
EL-302
EL-303
MAXIMUM RATINGS
Item
Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°...) 5
Symbol
VR F I F IP PD Topr. Tstg. Tsol.
Rating
5 50 0.5 75 -25~+85 -30~+100 240
Unit
V mA A mW °... °... °...
*1. pulse width £tw ßZ100period £ 10msec. sec. ·Ï T= *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item Symbol
VF R I Ct PO ·Îp ··Î °,·Ë
(Ta=2°...) 5
Conditions
F I= 5 0 m A VR=5V f=1MHz F I= 5 0 m A F I= 5 0 m A F I= 5 0 m A
Min.
Typ.
25 0.7 940 50 °æ 0 3
Max.
1.6 10
Unit.
V ·A Ï pF mW/sr nm nm deg.
- 1-
Infrared Emitting Diodes(GaAs)
EL-302 °§EL-303
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
- 2-
|
|
