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Details, datasheet, quote on part number:EL-313
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Datasheet text preview:
Infrared Emitting Diodes(GaAs)
K DNH OESI
EL-313
DIMENSIONS
The EL-313 is a high-power GaAs IRED mounted in a c l e a r side-viewing package. This IRED is both compact and easy to mount.
(Unit : mm)
FEATURES
¶UCompact plastic mold type
APPLICATIONS
¶UOptical switches ¶UTransmission sensors
MAXIMUM RATINGS
Item
Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°...) 5
Symbol
VR F I PD F IP Topr. Tstg. Tsol.
Rating
4 50 100 1 £ 0 £85 2° ´ £ 0 £85 3° ´ 240
Unit
V mA mW A °... °... °...
*1. pulse width £tw ßZ100period £ 10msec sec. ·Ï T= *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Peak emission wavelength Radiant intensity *3 Half angle
TP *3. Exclusive ris used as detector
(Ta=2°...) 5
Symbol
VF R I ·Îp PO ··Ë
Conditions
F I= 3 0 m A VR=4V F I= 2 0 m A F I= 3 0 m A
Min.
Typ.
1.2 940 2.0 °æ 0 2
Max.
1.5 10
Unit.
V ·A Ï nm mW deg.
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Infrared Emitting Diodes(GaAs)
EL-313
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
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