Details and datasheet on part: EL-313

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Part: EL-313

Category:
Discrete
-> Diodes & Rectifiers

Description: Infrared Emitting Diodes ( GAAS )

Company: Kodenshi

Datasheet: Download EL-313 datasheet File size : 65 kB

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Datasheet text preview:
Infrared Emitting Diodes(GaAs)

K DNH OESI

EL-313
DIMENSIONS
The EL-313 is a high-power GaAs IRED mounted in a c l e a r side-viewing package. This IRED is both compact and easy to mount.
(Unit : mm)

FEATURES
¶UCompact plastic mold type

APPLICATIONS
¶UOptical switches ¶UTransmission sensors

MAXIMUM RATINGS
Item
Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp.

(Ta=2°...) 5

Symbol
VR F I PD F IP Topr. Tstg. Tsol.

Rating
4 50 100 1 £ 0 £85 2° ´ £ 0 £85 3° ´ 240

Unit
V mA mW A °... °... °...

*1. pulse width £tw ßZ100period £ 10msec sec. ·Ï T= *2. For MAX.5 seconds at the position of 2 mm from the package

ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Peak emission wavelength Radiant intensity *3 Half angle
TP *3. Exclusive ris used as detector

(Ta=2°...) 5

Symbol
VF R I ·Îp PO ··Ë

Conditions
F I= 3 0 m A VR=4V F I= 2 0 m A F I= 3 0 m A

Min.

Typ.
1.2 940 2.0 °æ 0 2

Max.
1.5 10

Unit.
V ·A Ï nm mW deg.

- 1-

Infrared Emitting Diodes(GaAs)

EL-313

Power dissipation Vs. Ambient temperature

Radiant intensity Vs. Forward current

Relative radiant intensity Vs. Ambient temperature

Relative intensity Vs. Wavelength

Forward current vs. Forward voltage

Radiant Pattern

Relative radiant intensity Vs. Distance

- 2-

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