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Part: EL-314
Category:
Discrete
-> Diodes & Rectifiers
Description: Infrared Emitting Diodes ( GAAS )
Company: Kodenshi
Datasheet: Download EL-314 datasheet File size : 65 kB
Request For quote: Find where to buy EL-314
Datasheet text preview:
Infrared Emitting Diodes(GaAs)
K DNH OESI
EL-314
DIMENSIONS
The EL-314 a high-power GaAs IRED mounted in a clear sidelooking package, is compact, low profile, and easy to mount.
(Unit : mm)
FEATURES
¶U ompact C ¶ULow profile package ¶U ow-cost L ¶USidelooking plastic package
APPLICATIONS
¶U hotointerrupters P ¶UOptical switches ¶U oys T
MAXIMUM RATINGS
Item
Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°...) 5
Symbol
VR F I F IP PD Topr. Tstg. Tsol.
Rating
5 50 0.5 75 -25~+85 -30~+100 240
Unit
V mA A mW °... °... °...
*1. pulse width £tw ßZ100period £ 10msec. sec. ·Ï T= *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle
(Ta=2°...) 5
Symbol
VF R I Ct PO ·Îp ··Î °,·Ë
Conditions
F I= 5 0 m A VR=5V f=1MHz F I= 5 0 m A F I= 5 0 m A F I= 5 0 m A
Min.
Typ.
25 0.7 940 50 °æ 0 3
Max.
1.6 10
Unit.
V ·A Ï pF mW/sr nm nm deg.
- 1-
Infrared Emitting Diodes(GaAs)
EL-314
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
- 2-
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