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Part: EL-316
Category:
Discrete
-> Diodes & Rectifiers
Description: Infrared Emitting Diodes ( GAAS )
Company: Kodenshi
Datasheet: Download EL-316 datasheet File size : 65 kB
Request For quote: Find where to buy EL-316
Datasheet text preview:
Infrared Emitting Diodes(GaAs)
K DNH OESI
EL-316
DIMENSIONS
The EL-316 is a high-power GaAs IRED mounted in a clear epoxy package.
(Unit : mm)
FEATURES
¶U©TM3 casting mold type ¶UHigh output power
APPLICATIONS
¶U TR V ¶UOptical remote controllers ¶UTransmission sensors
MAXIMUM RATINGS
Item
Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°...) 5
Symbol
VR F I PD F IP Topr. Tstg. Tsol.
Rating
4 60 80 0.5 £ 5 £80 2° ´ £ 0 £85 4° ´ 240
Unit
V mA mW A °... °... °...
*1. pulse width £tw ßZ100period £ 10msec. sec. ·Ï T= *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Peak emission wavelength Spectral bandwidth Radiant intensity Half angle
(Ta=2°...) 5
Symbol
VF R I ·Îp ··Î PO ··Ë
Conditions
F I= 4 0 m A VR=4V F I= 4 0 m A F I= 4 0 m A F I=40mA
Min.
Typ.
1.2 940 50 20 °æ 7 1
Max.
1.5 10
Unit.
V ·A Ï nm nm mW/sr deg.
10
- 1-
Infrared Emitting Diodes(GaAs)
EL-316
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
- 2-
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