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Part: EL-325
Category:
Discrete
-> Diodes & Rectifiers
Description: Infrared Emitting Diodes ( GAAS )
Company: Kodenshi
Datasheet: Download EL-325 datasheet File size : 65 kB
Request For quote: Find where to buy EL-325
Datasheet text preview:
Infrared Emitting Diodes(GaAs)
K DNH OESI
EL-325
DIMENSIONS
The EL°©325 is a GaAs IRED mounted in a low profile clear epoxy package.This IRED is both compact and easy to mount.
(Unit : mm)
FEATURES
¶UUltra compact ¶ULow profile ¶U nap © n mount is possible S °i
APPLICATIONS
¶U hotointerrupters P ¶UOptical equipment
MAXIMUM RATINGS
Item
Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°...) 5
Symbol
VR F I PD F IP Topr. Tstg. Tsol.
Rating
5 50 100 0.5 £ 5 £85 2° ´ £ 0 £85 3° ´ 260
Unit
V mA mW A °... °... °...
*1. pulse width £tw ßZ100period £ 10msec. sec. ·Ï T= *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Peak emission wavelength Spectral bandwidth Radiant intensity *3 Half angle
(Ta=2°...) 5
Symbol
VF R I ·Îp ··Î PO ··Ë
Conditions
F I= 5 0 m A VR=5V F I= 5 0 m A F I= 5 0 m A F I= 5 0 m A
Min.
Typ.
940 50 0.7 °æ 0 5
Max.
1.6 10
Unit.
V ·A Ï nm nm mW/sr deg.
*3. Measured by tester of KODENSHI CORP.
- 1-
Infrared Emitting Diodes(GaAs)
EL-325
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
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