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Part: EL-55L
Category:
Discrete
-> Diodes & Rectifiers
Description: Infrared Emitting Diodes ( GAAS )
Company: Kodenshi
Datasheet: Download EL-55L datasheet File size : 65 kB
Request For quote: Find where to buy EL-55L
Datasheet text preview:
Infrared Emitting Diodes(GaAs)
K DNH OESI
EL-55L
DIMENSIONS
The EL-55L is a high-power GaAs IRED mounted in a clear plastic package. This LED emits infrared light t h r o u g h two plastic lenses on both sides of the package is ideally suited for use with VTR tape-end sensors.
(Unit : mm)
FEATURES
¶U ompact C ¶ULow profile package ¶U ow-cost L ¶USidelooking plastic package ¶ULong-lead type
APPLICATIONS
¶UVTR type-end sensor
MAXIMUM RATINGS
Item
Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°...) 5
Symbol
VR F I F IP PD Topr. Tstg. Tsol.
Rating
5 50 1 75 -25~+85 -30~+85 260
Unit
V mA A mW °... °... °...
*1. pulse width £tw ßZ100period £ 10msec. sec. ·Ï T= *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle
(Ta=2°...) 5
Symbol
VF R I Ct PO ·Îp ··Î °,·Ë
Conditions
F I= 5 0 m A VR=5V f=1MHz F I= 2 0 m A F I =20mA F I= 2 0 m A
Min.
Typ.
1.3 25 2.0 940 50 -
Max.
1.5 10
Unit.
V ·A Ï pF mW/sr nm nm deg.
0.7 -
-
- 1-
Infrared Emitting Diodes(GaAs)
EL-55L
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward voltage
Radiant Pattern
- 2-
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