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Details, datasheet, quote on part number:2N2906E
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| Part: | 2N2906E |
| Category: | Discrete => Transistors => Bipolar => Switching |
| Description: | Description = Switching Transistor ;; Package = TES6 |
| Company: | Korea Electronics (KEC) |
| Datasheet: | Download 2N2906E datasheet File size : 53 kB |
| Request For quote: | Find where to buy 2N2906E
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Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
2N2906E
EPITAXIAL PLANAR PNP TRANSISTOR
B B1
FEATURES
: ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. : Cob=4.5pF(Max.) @VCB=5V.
1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1
H A1
Low Leakage Current
A
C
1
6
C
2
5
3
4
P
P
DIM A A1 B B1 C D H J
P
MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05
5
Low Collector Output Capacitance
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating
)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -40 -40 -5 -200 -50 200 150 -55 150 UNIT V V V mA mA mW
EMITTER BASE BASE COLLECTOR EMITTER COLLECTOR
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
Q1
J
D
Q2
1
2
3
Marking
Type Name
ZA
2002. 9. 17
Revision No : 0
1/4
2N2906E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage SYMBOL ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=-5V, IC=-0.1mA, Rg=1k , f=10Hz 15.7kHz
Vout V in 275
TEST CONDITION VCE=-30V, VEB=-3V VCE=-30V, VEB=-3V IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VBE=-0.5V, IC=0, f=1MHz
MIN. -40 -40 -5.0 60 80 100 60 30 -0.65 250 2.0
TYP. -
MAX. -50 -50 300 -0.25 -0.4 -0.85 -0.95 4.5 10 12 10 400 60 4.0
UNIT nA nA V V V
V
Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure
*
V MHz pF pF k x10-4
VCE=-10V, IC=-1mA, f=1kHz
1.0 100 3.0 -
dB
Delay Time
td
10k
C Total 4pF
-
-
35
Rise Time Switching Time Storage Time
tr
0.5V -10.6V 300ns
VCC =-3.0V 0 t r ,t f < 1ns, Du=2%
-
-
35 nS
Vout V in 275
tstg
10k 1N916 or equiv.
C Total 4pF
-
225
Fall Time
tf
9.1V -10.9V 20µs
VCC =-3.0V 0 t r ,t f < 1ns, Du=2%
-
-
75
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2002. 9. 17
Revision No : 0
2/4
2N2906E
I C - VCE
COLLECTOR CURRENT I C (mA) -100 -80 -60 -40 -20 0 0 -1 -2
-1 -0.9 -0.8
h FE - I C
1k DC CURRENT GAIN h FE 500 300
Ta=125 C Ta=25 C Ta=-55 C COMMON EMITTER VCE =-1V
-0.7 -0.6 -0.5 -0.4 -0.3 -0.2 IB =-0.1mA COMMON EMITTER Ta=25 C
100 50 30
-3
-4
10 -0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
VBE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -5 -3
COMMON EMITTER I C /I E =10
VCE(sat) - I C
-1 -0.5 -0.3
COMMON EMITTER I C /I B =10
-1 -0.5 -0.3
Ta=-55 C Ta=25 C Ta=125 C
-0.1 -0.05 -0.03
Ta=1
25 C
Ta=25 C Ta=-55 C
-0.1 -0.1
-0.3
-1
-3
-10
-30
-100
-300
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - VBE
-200 COLLECTOR CURRENT I C (mA) -160 -120
5C Ta=25 C Ta=55 C
COMMON EMITTER VCE =-1V
VCE - I B
-1.0 -0.8
IC =1mA
IC =10mA
I C =30mA
-0.6 -0.4 -0.2
-40 0 0 -0.4
Ta=12
-80
-0.8
-1.2
-1.6
0 -0.001
COMMON EMITTER Ta=25 C
-0.01
-0.1
-1
I C =100mA
-10
BASE-EMITTER VOLTAGE V BE (V)
BASE CURRENT I B (mA)
2002. 9. 17
Revision No : 0
3/4
2N2906E
50 30 CAPACITANCE C ob (pF) C ib (pF)
COLLECTOR POWER DISSIPATION PC (mW)
C ob - VCB , C ib - VEB
f=1MHz Ta=25 C
Pc - Ta
250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C)
10 5 3
C ib
C ob
1 0.5 -0.1 -0.3 -1 -3 -10 -30 REVERSE VOLTAGE V CB (V) V EB (V)
2002. 9. 17
Revision No : 0
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