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Details, datasheet, quote on part number:KRA111S
 
 
Part:KRA111S
Category:Discrete => Transistors => Bipolar => General Purpose => BRTs
Description:Description = Built in Bias Resistor ;; Package = SOT-23
Company:Korea Electronics (KEC)
Datasheet:Download KRA111S datasheet   File size : 51 kB
Request For quote:  Find where to buy KRA111S
 



Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES
With Built-in Bias Resistors. Simplify Circuit Design.
A G
KRA110S~KRA114S
EPITAXIAL PLANAR PNP TRANSISTOR
L
E B
L
Reduce a Quantity of Parts and Manufacturing Process.
2
3
1
P
P
C
N
EQUIVALENT CIRCUIT
C B R1
DIM A B C D E G H J K L M N P
MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
H
M
1. EMITTER 2. BASE 3. COLLECTOR
E
K
SOT-23
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -50 -50 -5 -100 200 150 -55 150 UNIT V V V mA mW
MARK SPEC
TYPE MARK KRA110S PK KRA111S PM KRA112S PN KRA113S PO KRA114S PP
Marking
Lot No. Type Name
2002. 7. 9
Revision No : 2
J
D
1/4
KRA110S~KRA114S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA110S KRA111S Input Resistor KRA112S KRA113S KRA114S KRA110S KRA111S Rise Time KRA112S KRA113S KRA114S KRA110S KRA111S Switching Time Storage Time KRA112S KRA113S KRA114S KRA110S KRA111S Fall Time KRA112S KRA113S KRA114S Note : * Characteristic of Transistor Only. tf tstg VO=-5V VIN=-5V RL=1k tr R1 SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 TYP. -0.1 250 4.7 10 100 22 47 0.2 0.065 0.4 0.1 0.15 2.0 1.7 3.0 2.0 1.5 0.3 0.3 1.7 0.8 1.5 MAX. -100 -100 -0.3 S k V MHz UNIT nA nA
2002. 7. 9
Revision No : 2
2/4
KRA110S~KRA114S
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1
Ta=100 C Ta=25 C Ta=-25 C
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA110S
KRA110S
I C /IB =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA111S
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA111S
I C /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA112S
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA112S
IC /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
2002. 7. 9
Revision No : 2
3/4