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Details, datasheet, quote on part number:KTB1151
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| Part: | KTB1151 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Description = General Purpose Transistor ;; Package = TO-126 |
| Company: | Korea Electronics (KEC) |
| Datasheet: | Download KTB1151 datasheet File size : 406 kB |
| Request For quote: | Find where to buy KTB1151
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Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
C
KTB1151
EPITAXIAL PLANAR PNP TRANSISTOR
A B D E F
FEATURES
High Power Dissipation : PC=1.5W(Ta=25 ) Complementary to KTD1691.
H J
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * PW 10ms, Duty Cycle 50% Ta=25 Tc=25 DC Pulse *
)
SYMBOL VCBO VCEO VEBO IC IC P IB PC Tj Tstg RATING -60 -60 -7 -5 -8 -1 1.5 20 150 -55 150 UNIT V V V A A W
N
K
L
M O 1 2 3
P
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C D E F G H J K L M N O P
MILLIMETERS 8.3 MAX 5.8 0.7 _ 3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current ICBO IEBO hFE 1 DC Current Gain *
)
TEST CONDITION VCB=-50V, IE=0 VEB=-7V, IC=0 VCE=-1V, IC=-0.1A VCE=-1V, IC=-2A VCE=-2V, IC=-5A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A
OUTPUT 0 I B2 INPUT I B1 5 I B2
SYMBOL
MIN. 60 160 50 -
TYP. -0.14 -0.9 0.15 0.78 0.18
MAX. -10 -10 400 -0.3 -1.2 1 2.5 1
UNIT A A
hFE2 (Note) hFE 3
Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn On Time Switching Time Storage Time Fall Time * Pulse test : PW *
VCE(sat) VBE(sat) ton tstg tf
V V
IB1 20µsec
S
-IB1 =IB2=0.2A DUTY CYCLE < 1% =
VCC =-10V
350 S, Duty Cycle 2% Pulse O:160 320, Y:200 400.
Note) hFE(2) Classification :
2003. 7. 24
Revision No : 2
1/3
KTB1151
Pc - Ta
25 POWER DISSIPATION PC (W) 20 15 10 5 0 0 50 100 150 200 250
Tc=Ta INFINITE HEAT SINK
d T - TC
160 I C DERATING dT (%) 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200
S/b Lim Di ited ssi pa tio nL im ite d
AMBIENT TEMPERATURE Ta ( C)
CASE TEMPERATURE Tc ( C)
SAFE OPERATING AREA
-10 COLLECTOR CURRENT I C (A) -5 -3 COLLECTOR CURRENT I C (A)
IC (Pulse)MAX.
-10
2m S 10 mS * IC (DC)MAX. * Di 20 ss 0m i S/ pati S b L on im Li ite mi d ted
* SINGLE NONREPETIVE PULSED Ta=25 C CURVES MUST BE DERATED LINERLY WITH INCREASE IN TEMPERATURE
REVERSE BIAS SAFE OPERATING AREA
-8 -6 -4 -2
-1 -0.5 -0.3
-0.1 -1
V EO MAX. C
-3
-5
-10
-30
-50
-100
0
-20
-40
-60
VCEO (SUS)
-80
-100
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR-EMITTER VOLTAGE V CE (V)
I C - V CE
-10 COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE -8
mA
A 0m A -15 0m 0mA I B= -10 I B=-8 = I B =-60mA IB
h FE - I C
1k 500 300 100 50 30 10 5 3 1 -0.01
VCE =-1V VCE =-2V
-6 -4 -2
IB
=-2
I B =-40mA I B =-30mA I B =-20mA I B =-10mA I B =0mA
00
0
-0.4
-0.8
-1.2
-1.6
-2.0
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (A)
2003. 7. 24
Revision No : 2
2/3
KTB1151
V BE(sat), V CE(sat) - I C
-10 STATURATION VOLTAGE VBE(sat), V CE(sat) (V) -5 -3 -1 -0.5 -0.2 -0.1 -0.05 -0.03 -0.01
VCE(sat) VBE(sat) I C /I B =10
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I C (A)
2003. 7. 24
Revision No : 2
3/3
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