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Details, datasheet, quote on part number:KTB1260
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| Part: | KTB1260 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Description = General Purpose Transistor ;; Package = SOT-89 |
| Company: | Korea Electronics (KEC) |
| Datasheet: | Download KTB1260 datasheet File size : 406 kB |
| Request For quote: | Find where to buy KTB1260
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Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
GENERAL PURPOSE APPLICATION. FEATURES
1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTD1898.
KTB1260
EPITAXIAL PLANAR PNP TRANSISTOR
A H
C
G
J B E
D
D K F F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC IE PC PC* Tj Tstg
2
RATING -80 -80 -5 -1 1 500 1 150 -55 150
UNIT V V V A A mW W
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
1 2 3
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05
SOT-89
* Mounted on ceramic substrate(250mm
0.8t)
Marking
h FE Rank Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification O:70 140, Y:120
)
TEST CONDITION VCB=-60V, IE=0 VEB=-4V, IC=0 IC=-1mA, IB=0 VCE=-3V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-50mA, f=30MHz VCB=-10V, IE=0, f=1MHz GR:200 400 MIN. -80 70 TYP. 100 25 MAX. -1 -1 400 -0.4 V MHz pF UNIT A A V
SYMBOL ICBO IEBO V(BR)CEO hFE(Note) VCE(sat) fT Cob 240,
2003. 7. 3
Revision No : 1
X
Type Name
1/3
KTB1260
I C - VCE
COLLECTOR CURRENT I C (mA)
Ta=25 C VCE =-5V
I C - VBE
COLLECTOR CURRENT I C (mA) -1K -1.0 -0.8 -0.6 -0.4 -0.2 0
Ta=25 C -0.45mA -0.4mA -0.35mA -0.3mA -0.25mA -0.2mA -0.15mA -0.1mA -0.05mA IB =0mA
-100
-10
-1
-0.1
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 COLLECTOR-EMITTER VOLTAGE VCE (V)
BASE-EMITTER VOLTAGE VBE (V)
h FE - I C
1K DC CURRENT GAIN h FE COLLECTOR SATURATION VOLTAGE VCE(sat) (V) 500 200 100 50 20 10 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1K -2K
VCE =-3V
V CE(sat) - IC
Ta=25 C
-2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1K -2K
I C /I B =20 IC /I B =10
VCE =-1V
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
f T - IE
TRANSITION FREQUENCY f T (MHz) 1K 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1K
Ta=25 C VCE =-5V
C ob - VCB
1K 500 200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
Ta=25 C f=1MHz I E =0A
EMITTER CURRENT I C (mA)
COLLECTOR-BASE VOLTAGE VCB (V)
2003. 7. 3
Revision No : 1
2/3
KTB1260
SAFE OPERATING AREA
-3 COLLECTOR CURRENT I C (A) -1 -300m -100m -30m -10m -3m -1m -0.1
* SINGLE NONREPETITVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
COLLECTOR POWER DISSIPATION Pc (W)
Pc - Ta
1.2 1.0 0.8 0.6 0.4 0.2 0
2 1 1 MOUNTED ON CERAMIC
I C (Pulse) MAX. * I C MAX. (CONTINUOUS)
DC OP ER
10
Pw
0m
=1
S*
0m
s*
SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C
AT
IO
N
0
20
40
60
80
100
120
140
160
-0.3
-1
-3
-10
-30
-100
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 7. 3
Revision No : 1
3/3
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