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Details, datasheet, quote on part number:KTB631K
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| Part: | KTB631K |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Description = General Purpose Transistor ;; Package = TO-126 |
| Company: | Korea Electronics (KEC) |
| Datasheet: | Download KTB631K datasheet File size : 403 kB |
| Request For quote: | Find where to buy KTB631K
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Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS
C
KTB631K
EPITAXIAL PLANAR PNP TRANSISTOR
A B E F G D
FEATURES
High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE.
H J
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25
)
SYMBOL VCBO VCEO VEBO IC IC P PC Tj Tstg RATING -120 -120 -5 -1 -2 1.5 8 150 -55 150 UNIT V V V A
N
K
L
M O 1 2 3
P
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C D E F G H J K L M N O P
MILLIMETERS 8.3 MAX 5.8 0.7 _ 3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX
W
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn-on Time Switching Time Turn-off Time Storage Time Note : hFE(1) Classification SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) Note hFE(2) fT Cob VCE(sat) VBE(sat) ton toff tstg
20µsec 100 1uF 2V VCE =-12V I C =10I B1 =-10I B2 =50mA 1uF -12V
TEST CONDITION VCB=-50V, IE=0 VEB=-4V, IC=0 IC=-10 A IC=-1mA IE=-10 A VCE=-5V, IC=-50mA VCE=-5V, IC=-500mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA
1 I B2 I B1 24
MIN. -120 -120 -5 100 20 -
TYP. 110 30 -0.15 -0.85 80 100 600
MAX. -1 -1 320 -0.4 -1.2 -
UNIT A A V V V
MHz pF V V
nS
Y:100 200, GR:160 320
2003. 7. 24
Revision No : 2
1/2
KTB631K
VCE - I C
-1.6 COLLECTOR CURRENT I C (A) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -1 -2 -3 COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V)
Tc=25 C -20 -15 -12 -8 -6 -4 -2 I B =0mA -10
VCE(sat) - I C
-1.0 -0.5 -0.3
I C /I B =10
-0.1 -0.05 -0.03
-4
-5
-6
-0.01 -1
-3
-10
-30
-100
-300
-1k
-3k
COLLECTOR-EMITTER VOLTAGE VCE (V)
VBE - I C
COLLECTOR CURRENT I C (A) -1.4 -1.2 -1.0 -0.8 -0.6 COLLECTOR DISSIPATION PC (W) -0.4 -0.2 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE V BE (V) -1.2 10 8 6 4 2 0
VCE =-5V
COLLECTOR CURRENT I C (mA)
Pc - Ta
inf
ini te he at sin k
C ob - V CB
OUTPUT CAPACITANCE C ob (pF) 200
f=1MHz
100 50 30
No Heat Sink
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
10 5 5 -1 -3 -10 -30 -100
COLLECTOR-BASE VOLTAGE V CE (V) COLLECTOR CURRENT I C (A)
ASO
5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005
DC 10mS 1mS
h FE - I C
500 DC CURRENT GAIN h FE 300
VCE =-5V
100µS
100 50 30
10
-1
-3
-10
-30
-100
-300
-1k
-5k
1
10
100
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 7. 24
Revision No : 2
2/2
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