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Details, datasheet, quote on part number:KTB772
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| Part: | KTB772 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Description = General Purpose Transistor ;; Package = TO-126 |
| Company: | Korea Electronics (KEC) |
| Datasheet: | Download KTB772 datasheet File size : 406 kB |
| Request For quote: | Find where to buy KTB772
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Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING
C
KTB772
EPITAXIAL PLANAR PNP TRANSISTOR
A B D E F
FEATURES
Complementary to KTD882.
G
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Range Note : Pulse Width Ta=25 Tc=25 DC Pulse (Note)
)
SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -40 -30 -5 -3 -7 -0.6 1.5 10 150 -55 150 UNIT V V V A A W
N
J K L
M O 1 2 3
P
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C D E F G H J K L M N O P
MILLIMETERS 8.3 MAX 5.8 0.7 _ 3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX
TO-126
10mS, Duty Cycle 50%.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter-Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Output Capacitance Note: hFE(2) Classification * * * SYMBOL ICBO IEBO hFE(1) hFE(2) (Note) VCE(sat) VBE(sat) fT Cob O:100 200 , Y:160 TEST CONDITION VCB=-30V, IE=0 VEB=-3V, IC=0 VCE=-2V, IC=-20mA VCE=-2V, IC=-1A IC=-2A, IB=-0.2A IC=-2V, IB=-0.2A VCE=-5V, IC=-0.1A VCB=-10V, IE=0, f=1MHz 320 , GR:200 400 MIN. 30 100 TYP. 220 160 -0.3 -1.0 80 55 MAX. -1 -1 400 -0.5 -2.0 V V MHz pF UNIT A A
* Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed
2003. 7. 24
Revision No : 4
1/3
KTB772
I C - VCE
-1.8 COLLECTOR CURRENT I C (A) -1.6 -1.2 -1.0 -0.4 0 0 -4 -8 -12
IB =-10mA IB =-9mA IB =-8mA IB =-7mA IB =-6mA IB =-5mA IB =-4mA IB =-3mA IB =-2mA IB =-1mA
h FE - I C
1K DC CURRENT GAIN h FE 500 300 100 50 30 10 5 3 1 -20 -1 -3 -10 -30 -100 -300 -1K -3K COLLECTOR CURRENT I C (mA)
VCE =-2V
-16
COLLECTOR-EMITTER VOLTAGE VCE (V)
SATURATION VOLTAGE VCE(sat), V BE(sat) (mV)
V CE(sat) ,V BE(sat) - I C
-10K -5K -3K -1K -500 -300 -100 -50 -30 -10 -5 -3 -1
VCE (sat) VBE (sat) I C /I B =10
C ob - VCB
1K 500 300 100 50 30 10 5 3 1
I E =0 f=1MHz
-3
-10
-30
-100
-300
-1K
-3K
CAPACITANCE Cob (pF)
-1
-3
-10
-30
-100
-300
-1K
COLLECTOR CURRENT I C (mA)
COLLECTOR-BASE VOLTAGE V CB (V)
CURRENT GAIN BANDWIDTH PRODUCT f T (MHz)
f T - IC
COLLECTOR CURRENT I C (A) 1K 500 300 100 50 30 10 5 3 1 -0.01
VCE =-5V
SAFE OPERATING AREA
-10 -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01
10
I C MAX. (PULSED) I C MAX. (CONTINUOUS)
0µ S
10
DC OP
=2
S 1m
m
S
SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
Tc
ER AT IO N
5
C
-0.03
-0.1
-0.3
-1
-3
-10
1
3
10
30
100
300
1K
COLLECTOR CURRENT I C (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 7. 24
Revision No : 4
2/3
KTB772
dT - Ta
160 POWER DISSIPATION PC (W) 140 DERATING dT(%), I C 120 100 80 60 40 20 0 0 50 100 150 200 CASE TEMPERATURE Ta ( C)
DI SS IP
S/b LIM
Pc - Ta
16 14 12 10 8 6 4 2 0 0 50 100 150 200 CASE TEMPERATURE Ta ( C)
ITE
AT
D
IO
N
LI
M
IT
ED
2003. 7. 24
Revision No : 4
3/3
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