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Details, datasheet, quote on part number:KTB817
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| Part: | KTB817 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Description = General Purpose Transistor ;; Package = TO-3P(N) |
| Company: | Korea Electronics (KEC) |
| Datasheet: | Download KTB817 datasheet File size : 401 kB |
| Request For quote: | Find where to buy KTB817
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Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
HIGH POWER AMPLIFIER APPLICATION.
A Q
KTB817
TRIPLE DIFFUSED PNP TRANSISTOR
B K
FEATURES
Complementary to KTD1047. Recommended for 60W Audio Frequency Amplifier Output Stage.
E
F I C
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC
)
SYMBOL VCBO VCEO VEBO IC IC P PC Tj Tstg RATING -160 -140 -6 -12 -15 100 150 -55 150 UNIT V V V A W
d
P
P
T
M
1
2
3
DIM A B C D d E F G H I J K L M P Q T
MILLIMETERS 15.9 MAX 4.8 MAX _ 20.0 + 0.3 _ 2.0 + 0.3 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 20.5 + 0.5 2.8 _ 5.45 + 0.2 _ 3.2 + 0.2 0.6+0.3/-0.1
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
Pulse
Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Output Capacitance Turn On Time Fall Time Storage Time Note : hFE(1) Classification O:60 120, Y:100 SYMBOL ICBO IEBO hFE (1) (Note) hFE 2 VCE(sat) VBE fT Cob ton tf tstg 200 TEST CONDITION VCB=-80V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC=-1A VCE=-5V, IC=-6A IC=-5A, IB=-0.5A VCE=-5V, IC=-1A VCE=-5V, IC=-1A VCB=-10V, IE=0, f=1MHz VCC=-20V IC=1A=10 RL=20 IB1=-10 IB2 MIN. 60 20 TYP. 15 300 0.25 0.53 1.61 -2.5 -1.5 S V V MHz pF MAX. -0.1 -0.1 200 UNIT mA mA
2002. 12. 11
Revision No : 2
L
G
J H
TO-3P(N)
1/3
KTB817
I C - VCE
-10 COLLECTOR CURRENT I C (A)
-240mA
h FE - I C
1k 500 300 100 50 30 10 5 3 1 -50 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (A)
VCE =-5V
-8 -6 -4 -2 0 0 -10
-200mA -160mA -120mA -80mA -40mA -20mA I B =0
-20
-30
-40
COLLECTOR EMITTER VOLTAGE V CE (V)
DC CURRENT GAIN h FE
VCE(sat) - I C
COLLECTOR-EMITTER VOLTAGE VCE(sat) (V) -10 -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V)
IC /I B =10
VBE(sat) - I C
-10 -5 -3
I C /I B =10
-1 -0.5 -0.3
-0.3
-1
-3
-5
-10
-0.1 -0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
I C - V BE
TRANSITION FREQUENCY f T (MHz) -8 COLLECTOR CURRENT I C (A) -7 -6 -5 -4 -3 -2 -1 0 0 -0.4 -0.8 -1.2 -1.6 BASE-EMITTER VOLTAGE V BE (V) 100 50 30
V CE =-5V
fT - IC
VCE =-5V
10 5 3
1 -0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I C (A)
2002. 12. 11
Revision No : 2
2/3
KTB817
C ob - V CB
COLLECTOR OUTPUT CAPACITANCE C ob (pF) 1k 500 300 COLLECTOR CURRENT I C (A)
f=1MHz
SAFE OPERATING AREA
-100 -50 -30
S 1m mS 10 S 0m 10
-10 -5 -3 -1 -0.5 -0.3 -0.1
DC
100 50 30
10 -1
-3
-10
-30
-100
-1
-3
-10
-30
-100
-300
-1k
COLLECTOR-BASE VOLTAGE V CB (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
2002. 12. 11
Revision No : 2
3/3
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