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Details, datasheet, quote on part number:KTC1804D
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| Part: | KTC1804D |
| Category: | Discrete => Transistors => Bipolar => Switching |
| Description: | Description = Switching Transistor ;; Package = Dpak |
| Company: | Korea Electronics (KEC) |
| Datasheet: | Download KTC1804D datasheet File size : 418 kB |
| Request For quote: | Find where to buy KTC1804D
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Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
HIGH CURRENT SWITCHING APPLICATION. APPLICATION
Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
A C
KTC1804D/L
EPITAXIAL PLANAR NPN TRANSISTOR
I J
FEATURES
Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) High Current and High fT : IC=8A, fT=180MHz. Excellent Linearity of hFE High Speed Switching Time. : fT=20nS (Typ.) Complementary to KTA1204D/L
1. BASE 2. COLLECTOR 3. EMITTER
1
H F 2 F 3
P L
DIM A B C D E F H I J K L M O P Q
MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX
B K E M Q
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse Ta=25 Tc=25
)
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING 60 60 6 8 12 1.0 20 150 -55 150
F F L
UNIT V V V A
A C
DPAK
I J
D
O
K
W
H G
P
1
2
3
DIM A B C D E F G H I J K L P Q
MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX
Q
1. BASE 2. COLLECTOR 3. EMITTER
E
B
IPAK
2003. 3. 27
Revision No : 2
1/4
KTC1804D/L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-base Breakdown Voltage Gain-Bandwidth Product Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time SYMBOL ICBO IEBO hFE (1) (Note) hFE (2) VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO fT Cob ton tstg tf
IB1
TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=6A IC=4A, IB=0.2A IC=4A, IB=0.2A IC=10 A, IE=0 IC=1mA, RBE= IE=10 A, IC=0 VCE=5V, IC=1A VCB=10V, IE=0, f=1MHz
20µsec INPUT IB2 DUTY CYCLE < 1% = IB1=-I B2 =0.4A OUTPUT 6.25 I B1 I B2
MIN. 100 35 60 50 6 -
TYP. 200 0.95
MAX. 1 1 400 400 1.3
UNIT A A
mV mV V V
180 65 50 500 20
-
V MHz pF
nS
VCC =25V
Note : hFE Classification O:100~200, Y:140~280, GR:200~400.
2003. 3. 27
Revision No : 2
2/4
KTC1804D/L
I C - V CE
10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT IC (A) 8 6 4 2 0
A 90m
I C - V CE
5
A 80m
70mA 60mA 50mA 40mA
30mA
30mA
25mA
100
mA
4 3 2 1 0
20mA
15mA
20mA 10mA I B =0mA
10mA
5mA I B =0mA
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR-EMITTER VOLTAGE V CE (V)
I C - V BE
8 COLLECTOR CURRENT IC (A) 7 6 5
Ta= 75 C Ta= 25 C Ta=25 C
VCE =2V
h FE - I C
1k DC CURRENT GAIN h FE 500 300
Ta=75 C Ta=25 C Ta=-25 C VCE =2V
4 3 2 1 0 0 0.2 0.4 0.6
100 50 30
0.8
1.0
1.2
10 0.01
0.03
0.1
0.3
1
3
10
20
BASE-EMITTER VOLTAGE V BE (V)
COLLECTOR CURRENT I C (mA)
fT - IC
COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 500 300
VCE =5V
C ob - VCB
500 300
f=1MHz
100 50 30
100 50 30
10 0.02
0.05 0.1
0.3 0.5
1
3
5
10 1 3 5 10 30 50 100 COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR CURRENT I C (mA)
2003. 3. 27
Revision No : 2
3/4
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