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Details, datasheet, quote on part number:KTC8050S
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| Part: | KTC8050S |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Description = General Purpose Transistor ;; Package = SOT-23 |
| Company: | Korea Electronics (KEC) |
| Datasheet: | Download KTC8050S datasheet File size : 403 kB |
| Request For quote: | Find where to buy KTC8050S
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Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
HIGH CURRENT APPLICATION. FEATURE
Complementary to KTC8550S.
L
KTC8050S
EPITAXIAL PLANAR NPN TRANSISTOR
E B
L
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC IE PC * Tj Tstg RATING 35 30 5 800 -800 350 150 -55 150 0.6 ) UNIT V
1
P
P
N
C
V V mA mA mW
DIM A B C D E G H J K L M N P
MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
A
G
H
M
1. EMITTER 2. BASE 3. COLLECTOR
K
* PC : Package Mounted On 99.5% Alumina (10 8
SOT-23
Marking
h FE Rank Lot No.
Type Name
BK
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification C : 100 200, D : 150
)
TEST CONDITION VCB=15V, IE=0 IC=0.5mA, IE=0 IC=1mA, IB=0 VCE=1V, IC=50mA VCE=1V, IC=350mA IC=500mA, IB=20mA VCE=1V, IC=500mA VCE=5V, IC=10mA VCB=10V, f=1MHz, IE=0 MIN. 35 30 100 60 TYP. 120 13 MAX. 50 300 0.5 1.2 V V MHz pF UNIT nA V V ICBO
SYMBOL
V(BR)CBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob 300
2003. 3. 25
Revision No : 1
J
D
1/2
KTC8050S
I C - V CE
1k COLLECTOR CURRENT I C (mA) 800 600 400 200 0 0 1 2 3 4 5
COMMON EMITTER Ta=25 C
h FE - I C
1k
7 6 5 4 3 2 I B =1mA 0 COMMON EMITTER VCE =1V Ta=100 C Ta=25 C Ta=-25 C
DC CURRENT GAIN h FE 6
8
500 300
100 50 30
10 1 3 10 30 100 300 1k COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3
00 =1 Ta C
I C - VBE
1k COLLECTOR CURRENT I C (mA) 500 300 100
Ta=25 C
Ta= 100
COMMON EMITTER I C /I B =25
COMMON EMITTER VCE =1V
0.1
Ta=-25 C
0.05 0.03
Ta=25 C Ta=100 C
10 5 3 1 0 0.2
0.01 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA)
0.4
0.6
Ta=-2
25 C -25 C
50 30
C
5C
0.8
1.0
1.2
BASE-EMITTER VOLTAGE V BE (V)
Pc - Ta
COLLECTOR POWER DISSIPATION Pc (mW) 500 400 300 200 100 0
1 MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
1 2 Ta=25 C
2
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 25
Revision No : 1
2/2
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