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Details, datasheet, quote on part number:KTC812T
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| Part: | KTC812T |
| Category: | Discrete => Transistors => Audio Muting transistor |
| Description: | Description = Audio Muting Transistor ;; Package = TS6 |
| Company: | Korea Electronics (KEC) |
| Datasheet: | Download KTC812T datasheet File size : 417 kB |
| Request For quote: | Find where to buy KTC812T
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Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
FOR MUTING AND SWITCHING APPLICATION. FEATURES
High Emitter-Base Voltage : VEBO=25V(Min.) High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
A F G
K 1
KTC812T
EPITAXIAL PLANAR NPN TRANSISTOR
E B K 6
Low on Resistance : RON=1 (Typ.), (IB=5mA)
2
5 4
DIM A B C D E
D
F G H I
3
MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2
0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
C
G
SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg 0.8 )
RATING 50 20 25 300 60 0.9 150 -55 150
UNIT V V V mA mA mW
J K L J J H I
L
1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1
EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR
TS6
* Package mounted on a ceramic board (600
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
Marking
h FE Rank
6 5 4
Lot No.
Q1
Q2
Type Name
M
1 2 3
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE Classification B: 350 1200 SYMBOL ICBO IEBO hFE VCE(sat) VBE fT Cob ton
)
TEST CONDITION VCB=50V, IE=0 VEB=25V, IC=0 VCE=2V, IC=4mA IC=30mA, IB=3mA VCE=2V, IC=4mA VCE=6V, IC=4mA VCB=10V, IE=0, f=1MHz
OUTPUT INPUT 50 4k 3k
MIN. 350 -
TYP. 0.042 0.61 30 4.8 160 500 130
MAX. 0.1 0.1 1200 0.3 7 -
UNIT A A
V V MHz pF
tstg tf
10V 1µs DUTY CYCLE < 2% = VBB =-3V
1k
nS
VCC =12V
2002. 12. 5
Revision No : 1
1/3
KTC812T
(Q 1 , Q 2 COMMON)
I C - VCE
50 COLLECTOR CURRENT I C (mA) 40 30 20
I B =20µA
I C - V CE (REVERSE REGION)
COLLECTOR CURRENT I C (mA)
160
COMMON EMITTER Ta=25 C
-10
140 120 100 80 60 40
-8 -6 -4 -2 0
COMMON EMITTER Ta=25 C
50 40 30 20 I B=10µA 0
10 0 0 2 4 6 8
0
10
0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR-EMITTER VOLTAGE V CE (V)
h FE - I C
COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (mV) 5k 3k DC CURRENT GAIN h FE
COMMON EMITTER
V CE(sat) - I C
500 300 100 50 30 10 5 3 1 0.1
COMMON EMITTER I C /I B =10
1k 500 300
Ta=100 C VCE =6V
Ta=25 C Ta=-25 C
100 50 0.3 1 3 10
VCE =2V
30
100
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
I C - V BE
TRANSTION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 300
COMMON EMITTER VCE =2V
fT - IE
500 300
COMMON EMITTER VCE =6V Ta=25 C
200
C
100 50 30
100
Ta= 1
00
Ta=25 C Ta=-25 C
10 5 -0.1 -0.3 -1 -3 -10 -30 -100
0
0
0.4
0.8
1.2
1.6
BASE-EMITTER VOLTAGE VBE (V)
EMITTER CURRENT I E (mA)
2002. 12. 5
Revision No : 1
2/3
KTC812T
C ob - V CB
COLLECTOR-EMITTER ON RESISTANCE R ON () COLLECTOR OUTPUT CAPACITANCE C ob (pF) 30
f=1MHz I E =0 Ta=25 C
R ON - I B
100 50 30 10 5 3 1 0.5 0.3 0.01
1k
10 5 3
10k IB
1 0.3
0.5
1
3
5
10
30
0.03
0.1
0.3
1
3
10
COLLECTOR-BASE VOLTAGE VCB (V)
BASE CURRENT I B (mA)
Pc - Ta
COLLECTOR POWER DISSIPATION PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0
MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm)
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
2002. 12. 5
Revision No : 1
3/3
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