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Part: KTC9011S
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: Description = Rf/vhf/uhf Transistor ;; Package = SOT-23
Company: Korea Electronics (KEC)
Datasheet: Download KTC9011S datasheet File size : 60 kB
Request For quote: Find where to buy KTC9011S
Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE
High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz.
2 L
KTC9011S
EPITAXIAL PLANAR NPN TRANSISTOR
E B
L
3
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC IE PC * Tj Tstg RATING 35 30 5 50 -50 350 150 -55 150 0.6 ) UNIT
P P
V V V mA mA mW
N C
M
DIM A B C D E G H J K L M N P
MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
A
G
H
1. EMITTER 2. BASE 3. COLLECTOR
K
SOT-23
* PC : Package Mounted On 99.5% Alumina (10 8
Marking
h FE Rank Lot No.
Type Name
BA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification F:54 80, ICBO IEBO
)
TEST CONDITION VCB=35V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA, f=100MHz VCB=10V, IE=0, f=1MHz 146, I:132 198 MIN. 54 100 TYP. 2.0 MAX. 0.1 0.1 198 0.4 400 V MHz pF UNIT A A
SYMBOL
hFE (Note) VCE(sat) fT Cob G:72 108, H:97
2003. 3. 25
Revision No : 1
J
D
1/3
KTC9011S
STATIC CHARACTERISTICS
COLLECTOR CURRENT I C (mA) 50 40 30 20 10 0 BASE-EMITTER VOLTAGE VBE (V) 0.2 0.4 0.6 0.8 600
VCE =6V VCE =6V 550 500 450 400 350 300 250 200 150 100 I B =50µA
h FE - I C
1K DC CURRENT GAIN h FE 500 300
COMMON EMITTER VCE =6V Ta=25 C I G.H
100 50 30
F
0
10
0.2
0.5
1
3
5
10
30 50
COMMON EMITTER Ta=25 C
COLLECTOR CURRENT I C (mA)
400
200
0
10
20
30
40
BASE CURRENT I B ( µA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
C oe , g oe - IE
OUPUT CONDUCTANCE g oe (µ ) 300 OUPUT CAPACITANCE C oe (pF) 100 50 30 10 5 3 1 30 10 5 3 1 0.5 0.3
g oe COMMON EMITTER VCE =6V f=455kHz Ta=25 C
0.1 -0.1
I G.H F
Coe {
{
I F
G.H
-0.3
-1
-3
-10
EMITTER CURRENT I E (mA)
C ie , g ie - I E
OUPUT CONDUCTANCE g oe (µ ) INPUT CONDUCTANCE g ie (m ) OUPUT CAPACITANCE C oe (pF) 300 INPUT CAPACITANCE C ie (pF) 3
COMMON EMITTER VCE =6V f=455kHz Ta=25 C G.H I F
C oe , g oe - I E
30 300
COMMON EMITTER VCE =6V f=10.7MHz Ta=25 C
I g oe G.H F
100 50 30
1 0.5 0.3
10 5 3
100 50 30
C ie
Coe G.H
I F
10 5
0.1
g ie
F G.H I
0.05 -0.1
-0.3 -0.5
-1
-3
-5
-10
1
10 -0.2
-0.5
-1
-3
-5
EMITTER CURRENT I E (mA)
EMITTER CURRENT I E (mA)
2003. 3. 25
Revision No : 1
2/3
KTC9011S
C ie , g ie - VCE
300 INPUT CONDUCTANCE g ie (m ) INPUT CAPACITANCE C ie (pF) 3 INPUT CONDUCTANCE g ie (m ) INPUT CAPACITANCE C ie (pF)
COMMON EMITTER I E =-1mA f=455kHz Ta=25 C
C ie , g ie - VCE
300 3
COMMON EMITTER I E =-1mA f=10.7MHz Ta=25 C g ie F G.H I
100 50 30
1 0.5 0.3
F G.H I
100
1
F G.H I
50 30 20
0.5 0.3 0.2 1
C ie
F G.H I
10
0.1 1
C ie g ie
3
5
10
30
3
5
10
30
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
C ie , g ie - I E
INPUT CONDUCTANCE g ie (m ) INPUT CAPACITANCE C ie (pF)
COMMON EMITTER VCE =6V f=10.7MHz Ta=25 C
Pc - Ta
COLLECTOR POWER DISSIPATION Pc (mW) 500
1 MOUNTED ON 99.5%
500 300
5 3
F H G. g ie I
400 300 200 100 0
ALUMINA 10x8x0.6mm
1 2 Ta=25 C
100 50 30 20
1
F
0.5 0.3 0.2 -0.2 -0.5 -1
C ie
G.H I
2
-3
-5
0
25
50
75
100
125
150
175
EMITTER CURRENT I E (mA)
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 25
Revision No : 1
3/3
Others parts begin by kt
KT-1 KT-2 KT-3 KT-4
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