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Part: KTC9018S
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: Description = Rf/vhf/uhf Transistor ;; Package = SOT-23
Company: Korea Electronics (KEC)
Datasheet: Download KTC9018S datasheet File size : 61 kB
Request For quote: Find where to buy KTC9018S
Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. High Transition Frequency : fT=800MHz(Typ.).
L
KTC9018S
EPITAXIAL PLANAR NPN TRANSISTOR
E B
L
2
3
1
P
P
N
C
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO IC IE PC * Tj Tstg
40 30 4 20 -20 350 150 -55 150 0.6 )
V V V mA mA mW
1. EMITTER 2. BASE 3. COLLECTOR
K
CHARACTERISTIC
SYMBOL
RATING
UNIT
M
SOT-23
* PC : Package Mounted On 99.5% Alumina (10 8
Marking
h FE Rank Lot No.
Type Name
BG
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Collector-Base Time Constant Noise Figure Power Gain Note : hFE Classification F:54 80, G:72 SYMBOL ICBO IEBO hFE (Note) Cre fT CC rbb' NF Gp e 108, TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=6V, f=1MHz, IE=0 VCE=10V, IC=8mA, f=100MHz VCE=6V, IE=-1mA, f=30MHz VCE=6V, IE=-1mA, f=100MHz H:97 146, I:130 198 MIN. 54 500 15 TYP. 800 MAX. 0.1 0.1 198 1.0 30 4.0 pF MHz pS dB UNIT A A
2003. 3. 25
Revision No : 1
J
MAXIMUM RATING (Ta=25
)
DIM A B C D E G H J K L M N P
MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
A
G
H
D
1/3
KTC9018S
STATIC CHARACTERISTICS
COLLECTOR CURRENT I C (mA) 20 16 12 8 4 0 BASE-EMITTER VOLTAGE VBE (V) 0.2 0.4 0.6 0.8 600
VCE =6V VCE =6V 500 450 400 350 300 250 200 150 100
h FE - I C
300 DC CURRENT GAIN h FE
COMMON EMITTER VCE =6V Ta=25 C
100 50 30
I B =50µA 0
10 0.1
COMMON EMITTER Ta=25 C
0.3 0.5
1
3
5
10
20
COLLECTOR CURRENT I C (mA)
400
200
0
10
20
30
40
BASE CURRENT I B ( µA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
yfe , fe - I E
FORWARD TRANSFER ADMITANCE yfe (m ) PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE fe ( ) -100 -50 -30 100
yfe
50 30
fe COMMON EMITTER VCE =6V f=100MHz Ta=25 C
-10 -5
10 5 -0.2
-0.5
-1
-3
-5
-10
EMITTER CURRENT I E (mA)
C oe , g oe - I E
30
OUPUT CONDUCTANCE g oe (µ ) 300
C ie , g ie - I E
30 INPUT CAPACITANCE C ie (pF) INPUT CONDUCTANCE g ie (m )
OUPUT CAPACITANCE C oe (pF)
10 5 3
100 50 30
COMMON EMITTER VCE =6V f=100MHz Ta=25 C
g oe
C ie
10 5 3
g ie COMMON EMITTER VCE =6V f=100MHz Ta=25 C
1 0.5
10 5 -0.2
C oe
1
-0.3
-1
-3
-5
-10
-0.2
-0.5
-1
-3
-5
-10
EMITTER CURRENT I E (mA)
EMITTER CURRENT I E (mA)
2003. 3. 25
Revision No : 1
2/3
KTC9018S
y oe - f
OUTPUT SUSCEPTANCE b oe (µ ) 2000
f=200MHz
yfe - f
FORWARD TRANSFER SUSCEPTANCE b fe (m ) 0
COMMON EMITTER VCE =6V I E =-1mA Ta=25 C f=10.7MHz 27 50 100 150
y re - f
REVERSE TRANSFER SUSCEPTANCE b re (µ ) 0
COMMON EMITTER VCE =6V
y ie - f
INPUT SUSCEPTANCE b ie (m )
f=10.7MHz 27 50 100
20 16 12 8 4 0
100 COMMON EMITTER VCE =6V 50 27 10.7 I E =-1mA Ta=25 C 150 f=200MHz
-200
I E =-1mA Ta=25 C
-400
150
-600
200
-800 -200
-160
-120
-80
-40
0
0
5
10
15
20
25
30
REVERSE TRANSFER CONDUCTANCE g re (µ )
INPUT CONDUCTANCE g ie (m )
Pc - Ta
COLLECTOR POWER DISSIPATION Pc (mW) 500 400 300 200 100 0
1 MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
1 2 Ta=25 C
2
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 25
Revision No : 1
1600 1200 800 400 0
27 10.7 50 100 COMMON EMITTER VCE =6V I E =-1mA Ta=25 C 150
-10
-20
200
-30
-40 0 10 20 30 40 50 FORWARD TRANSFER CONDUCTANCE g fe (m )
0
20
40
60
80
100
120
OUTPUT CONDUCTANCE g oe (µ )
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