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Part: MJD117L
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
Description: Description = Darlington Transistor ;; Package = Ipak
Company: Korea Electronics (KEC)
Datasheet: Download MJD117L datasheet File size : 113 kB
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Datasheet text preview:
S E M I C O N D U C TO R
T E C H N I C A L DATA
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
A
MJD117/L
EPITAXIAL PLANAR PNP TRANSISTOR
I J
FEATURES
High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage.
Q
C
K
Complementary to MJD112/L.
H
E
M
Straight Lead (IPAK, "L" Suffix)
P F 1 2 F 3 L
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse DC Ta=25 Tc=25
)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -100 -100 -5 -2 -4 -50 1.0 20 150
Q
UNIT V V V A mA W
DPAK
1. BASE 2. COLLECTOR 3. EMITTER
DIM A B C D E F H I J K L M O P Q
MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 0.2 1.10 + _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX
B
D
A C
I J
D
O
-55 150
H G
P
C B
F
F
L
1
2
3
DIM A B C D E F G H I J K L P Q
MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.2 2.0 + _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX
K
1. BASE 2. COLLECTOR 3. EMITTER
R1 = 10k
R2 = 0.6k E
E
B
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector Output Capacitance SYMBOL VCEO(SUS) ICEO ICBO IEBO hFE VCE(sat) V BE(ON) fT Cob TEST CONDITION IC=-30mA, IB=0 VCE=-50V, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-3V, IC=-0.5A VCE=-3V, IC=-2A IC=-2A, IB=-8mA VCE=-3V, IC=-2A VCE=-10V, IC=0.75A, f=1MHz VCB=-10V, IE=0, f=0.1MHz MIN. -100 500 1,000 25 TYP. 12,000 MAX. -20 -20 -2 -2.0 -2.8 200 V V MHz pF UNIT V A mA
2003. 3. 27
Revision No : 4
1/2
MJD117/L
h FE - I C
5k 3k DC CURRENT GAIN h FE
VCE =-3V
VCE(sat) , V BE(sat) - I C
-10 SATURATION VOLTAGE VCE(sat) , V BE(sat) (V) -5 -3
VBE(sat) I C/IB =250
1k 500 300
-1 -0.5 -0.3
VCE(sat)
100 50 -0.01 -0.03 -0.1 -0.3 -1 -3 -5
-0.1 -0.01
-0.03
-0.1
-0.3
-1
-3 -5
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (A)
C ob - VCB
500 CAPACITANCE C ob (pF) 300 POWER DISSIPATION P C (W) 25 20 15 10 5
2 1
P C - Ta
1 Tc=25 C 2 Ta=25 C
100 50 30
10 -0.1
-0.3
-1
-3
-10
-30 -50
0
0
50
100
150
200
COLLECTOR-BASE VOLTAGE VCB (V)
CASE TEMPERATURE Ta ( C)
SAFE OPERATING AREA
-10 COLLECTOR CURRENT I C (A) -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01
I C MAX.(PULSED) * I C MAX. (CONTINUOUS) DC OPERATION Tc=25 C
10
5m
1m
S*
50 0µ
0µ
S*
S*
S*
* SINGLE NONREPETIVE PULSE Tc=25 C CURVES MUST BE DREATED LINEARLY WITH INCREASE IN TEMPERATURE
-1
-3
-10
-30
-100 -200
COLLECTOR-EMITTER VOLTAGE V CE (V)
2003. 3. 27
Revision No : 4
2/2
Others parts begin by mj
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