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Details, datasheet, quote on part number:OD-148-C
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Datasheet text preview:
HIGH-POWER GaAlAS IR EMITTER CHIPS
.014
OD-148-C
FEATURES · High reliability LPE GaAlAs IRLED chips · Open center emission for imaging applications · High output uniformity from emitting surfaces
.008
.014
· Gold contacts for high reliability bonding All dimensions are nominal values in inches unless otherwise specified.
EMITTING SURFACE GOLD METALLIZATION
.002
GOLD CONTACTS
N P
.003
.005
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Peak Emission Wavelength, P Spectral Bandwidth at 50%, Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10µA VR = 0V 5 MIN 6 TYP 8 880 80 1.55 30 17 0.5 0.5 1.9 MAX UNITS mW nm nm Volts Volts pF µsec µsec
ABSOLUTE MAXIMUM RATINGS AT 25°C
Power Dissipation Continuous Forward Current Peak Forward Current (10µs, 300 Hz) Reverse Voltage Storage and Operating Temperature Range Maximum Junction Temperature 190mW 100mA 3A 5V -65°C to 150°C
150°C
The exact performance data depends on your package configuration and technique. Data listed in this specification is for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days from the shipment date. Opto Diode must be notified of any discrepancies within this period.
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335 Fax: (805) 499-8108 Email: sales@optodiode.com Web Site: www.optodiode.com
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