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Details, datasheet, quote on part number:OD-50J
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| Part: | OD-50J |
| Category: | Optoelectronics => Display => Infrared Emitters => IR Emitter |
| Description: | Stud Header Package IR Emitter (Military) |
| Company: | Opto Diode |
| Datasheet: | Download OD-50J datasheet File size : 75 kB |
| Request For quote: | Find where to buy OD-50J
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Datasheet text preview:
HI-REL GaAlAs IR EMITTERS
.013 R .100 .095 .125 6-32 .138 .225 .235 .410 .440
OD-50J
FEATURES · High reliability LPE GaAlAs IRLEDs · High power output · 880nm peak emission · Four wire bonds on chip corners · Hermetically sealed stud package · MIL-S-19500 screening available · No internal coatings All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
.130 .150
.324 .246 .332 .254
.265 .295
.285 .315
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time IF = 300mA IR = 10µA VR = 0V 5 IF = 50mA TEST CONDITIONS IF = 300mA MIN 20 TYP 25 880 80 115 1.5 40 90 0.7 0.7 1.8 MAX UNITS mW nm nm Deg Volts Volts pF µsec µsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1 Continuous Forward Current Peak Forward Current (10µs, 700Hz)2 Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
900mW 450mA 12A 5V 240°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -65°C TO 150°C 150°C 120°C/W Typical 35°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335 Fax: (805) 499-8108 Email: sales@optodiode.com Web Site: www.optodiode.com
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HI-REL GaAlAs IR EMITTERS
1000 900 POWER DISSIPATION (mW) 800 700 600 500 400 300 200 100 0 25 50 75 100 AMBIENT TEMPERATURE (°C) 125 150 NO HEAT SINK
OD-50J
100 PEAK FORWARD CURRENT, Ip (amps)
INFINITE HEAT SINK
THERMAL DERATING CURVE
MAXIMUM PEAK PULSE CURRENT
t = 10µs 10 t = 50µs t = 100µs D= t T
MAXIMUM RATINGS
1
t Ip T
0.1 0.01
0.1
1 DUTY CYCLE, D (%)
10
100
TYPICAL CHARACTERISTICS
100
DEGRADATION CURVE
100
RADIATION PATTERN
RELATIVE POWER OUTPUT (%)
90
RELATIVE POWER OUTPUT (%)
105
IF = 200mA TCASE = 36° C
80
80
60
70
IF = 450mA TCASE = 42° C NO PRE BURN-IN PERFORMED
40
60
20
50 101 102 103 STRESS TIME, (hrs) 104
0 100
80
60
40
20 0 20 40 BEAM ANGLE, (deg)
60
80
100
FORWARD I-V CHARACTERISTICS
4
1.5 1.4
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, IF (amps)
3
RELATIVE POWER OUTPUT
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
2
1
0
0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6
0.5 50
25
0 25 50 AMBIENT TEMPERATURE (°C)
75
100
SPECTRAL OUTPUT
100
1,000
POWER OUTPUT vs FORWARD CURRENT
RELATIVE POWER OUTPUT (%)
80
POWER OUTPUT, P (mW) o 100
60
40
10
20
DC PULSE 10µs, 100Hz
0 750
800
850 900 WAVELENGTH, (nm)
950
1,000
1 10
100 1,000 FORWARD CURRENT, IF (mA)
10,000
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335 Fax: (805) 499-8108 Email: sales@optodiode.com Web Site: www.optodiode.com
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