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Details, datasheet, quote on part number:OD-669
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Datasheet text preview:
HIGH-POWER GaAlAs IRLED ILLUMINATOR
.053 .067 .325 . 42 1 . 52 1
OD-669
FEATURES · · · · · Highest power output available 880nm peak emission Nine chips connected in series Very wide angle of emission Electrically isolated case
LED CHIPS .140 R (REF. ONLY)
EPOXY
.084 .096 .030
.342 R 1.225 1.255 .955 .965
.480
.426 .432 .350 MIN CATHODE .170 MAX
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified.
ANODE .680 .700 DIMPLE
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time IF = 50mA IF = 300mA IR = 10µA VR = 0V 5 TEST CONDITIONS IF = 300mA IF = 5A MIN 390 TYP 500 6500 880 80 120 13.5 30 11 3 3 15 MAX UNITS mW nm nm Deg Volts Volts pF µsec µsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1 Continuous Forward Current Peak Forward Current (10µs, 400Hz)2 Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
6W 400mA 5A 5V 240°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55°C to 100°C 100°C 60°C/W Typical 16°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335 Fax: (805) 499-8108 Email: sales@optodiode.com Web Site: www.optodiode.com
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HIGH-POWER GaAlAS IRLED ILLUMINATOR
THERMAL DERATING CURVE
6,000 PEAK FORWARD CURRENT, Ip (amps) 5,000 4,000 3,000 2,000 1,000 0 25 50 75 AMBIENT TEMPERATURE (°C) 100 NO HEAT SINK INFINITE HEAT SINK 10
OD-669
t = 10µs t = 50µs
MAXIMUM PEAK PULSE CURRENT
POWER DISSIPATION (mW)
1
t = 100µs
MAXIMUM RATINGS
0.1
t Ip T
0.1
D=
t T
0.01 0.01
1 DUTY CYCLE, D (%)
10
100
DEGRADATION CURVE TYPICAL CHARACTERISTICS
100 IF = 200mA TCASE = 33°C RELATIVE POWER OUTPUT (%) 105 100
RADIATION PATTERN
RELATIVE POWER OUTPUT (%)
90 IF = 400mA TCASE = 48°C
80
80
60
70 UNITS PRE CONDITIONED AT IF = 110mA, TCASE = 100°C, t = 24 HOURS
40
60
20
50 101 102 103 STRESS TIME, (hrs) 104
0 100 80
60
40
20 0 20 40 BEAM ANGLE, (deg)
60
80
100
6 5
FORWARD I-V CHARACTERISTICS
1.5 1.4
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, IF (amps)
RELATIVE POWER OUTPUT 10 14 18 22 FORWARD VOLTAGE, VF (volts) 26 30
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
4
3
2
1 0
0.5 50
25
0 25 50 AMBIENT TEMPERATURE (°C)
75
100
SPECTRAL OUTPUT
100 10,000
POWER OUTPUT vs FORWARD CURRENT
RELATIVE POWER OUTPUT (%)
80 POWER OUTPUT, P (mW) o 1,000
60
40
100
DC PULSE 10µs, 100Hz
20
0 750
10
800
850 900 WAVELENGTH, (nm)
950
1,000
10
100 1,000 FORWARD CURRENT, IF (mA)
10,000
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335 Fax: (805) 499-8108 Email: sales@optodiode.com Web Site: www.optodiode.com
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