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Part: OD-870F
Category:
Optoelectronics
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Description: High Speed IR Emitter in Narrow Angle TO-46 Package
Company: Opto Diode
Datasheet: Download OD-870F datasheet File size : 194 kB
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Datasheet text preview:
HIGH-SPEED GaAlAs IR EMITTERS
1.00 MIN. GLASS DOME
OD-870F
FEATURES
ANODE (CASE)
.015
.209 .220
· High reliability LPE grown GaAlAs · High power output · Fast response · Wide range of linear power output · Custom packages available
.041
.183 .186
.152 .154 .017
.100
· Custom spectral emission from 780-870nm available All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
.030 .040 .197 .205
CATHODE
.036 45 °
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10µA VR = 0V MIN 3.5 TYP 4.5 87 0 50 8 1.5 2 5 15 0 15 15 1.8 MAX UNITS mW nm nm De g Volts Volts pF nsec nsec
Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1 180mW 100mA 3A 2V 240°C Continuous Forward Current Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
Peak Forward Current (10µs, 200Hz)2
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55°C TO 100°C 100°C 400°C/W Typical 135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C
O P T O DIODE CORP.
750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 1 of 1
HIGH-SPEED GaAlAs IR EMITTERS
200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 AMBIENT TEMPERATURE (°C) 1 00 NO HEAT SINK INFINITE HEAT SINK
OD-870F
10 PEAK FORWARD CURRENT, Ip (amps)
THERMAL DERATING CURVE
MAXIMUM PEAK PULSE CURRENT
t = 10µs
1
t = 100µs t = 500µs
MA X I MU M R A T I N G S
0.1
t Ip T
D=
t T
0.01 0.01
0.1
1 DUTY CYCLE, D (%)
10
1 00
T Y P IC A L C H A R A C T E R IS T IC S
120 RELATIVE POWER OUTPUT (%)
DEGRADATION CURVE
IF = 100mA IF = 50mA IF = 20mA
100
RADIATION PATTERN
110
RELATIVE POWER OUTPUT (%) 1 04 1 05
80
100
60
90
40
80
TCASE = 25°C NO PRE BURN-IN PERFORMED
20
70
1 01
1 02
1 03 STRESS TIME, (hrs)
0 25
20
15
10
5 0 5 10 BEAM ANGLE, (deg)
15
20
25
4
FORWARD I-V CHARACTERISTICS
1.5 1.4
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, IF (amps)
3
RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
2
1
0
0.5 50
25
0 25 50 AMBIENT TEMPERATURE (°C)
75
100
100
SPECTRAL OUTPUT
1,000
POWER OUTPUT vs FORWARD CURRENT
RELATIVE POWER OUTPUT (%)
60
POWER OUTPUT, P (mW) o
80
100
10
40
20
1
DC PULSE 10µs, 100Hz
0 7 50
8 00
8 50 9 00 WAVELENGTH, (nm)
9 50
1,000
0.1 10
1 00 1,000 FORWARD CURRENT, IF (mA)
10,000
O P T O DIODE CORP.
750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 2 of 2
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