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Details, datasheet, quote on part number:OD-880FHT
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Datasheet text preview:
HIGH TEMPERATURE GaAlAs IR EMITTERS
1.00 MIN. GLASS DOME
OD-880FHT
FEATURES
ANODE (CASE) .209 .220
· Extended operating temperature range · No internal coatings · No derating or heat sink required to 80°C
.015
.183 .186
.152 .154 .017
.100 .041
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
.030 .040 .197 .205
CATHODE
.036 45 °
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10µA VR = 0V MIN 6 TYP 8 88 0 80 8 1.55 5 30 17 0.5 0.5 1.9 MAX UNITS mW nm nm De g Volts Volts pF µsec µsec
Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1 190mW 100mA 3A 5V 240°C Continuous Forward Current Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
Peak Forward Current (10µs, 400Hz)2
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -65°C TO 150°C 150°C 370°C/W Typical 120°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C
O P T O DIODE CORP.
750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 1 of 2
HIGH TEMPERATURE GaAlAs IR EMITTERS
200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 1 00 AMBIENT TEMPERATURE (°C) 1 25 1 50 NO HEAT SINK INFINITE HEAT SINK
OD-880FHT
t = 10µs
THERMAL DERATING CURVE
PEAK FORWARD CURRENT, Ip (amps)
10
MAXIMUM PEAK PULSE CURRENT
1
t = 100µs t = 500µs D= t T
MA X I MU M R A T I N G S
0.1
t Ip T
0.01 0.01
0.1
1 DUTY CYCLE, D (%)
10
1 00
T Y P IC A L C H A R A C T E R IS T IC S
100 RELATIVE POWER OUTPUT (%)
DEGRADATION CURVE
IF = 20mA RELATIVE POWER OUTPUT (%) 1 05
100
RADIATION PATTERN
90 IF = 50mA
80
80
60
70 TCASE = 25° C NO PRE BURN-IN PERFORMED
40
60
IF = 100mA
20
50
1 01
1 02
1 03 STRESS TIME, (hrs)
1 04
0 25
20
15
10
5 0 5 10 BEAM ANGLE, (deg)
15
20
25
4
FORWARD I-V CHARACTERISTICS
1.5 1.4
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, IF (amps)
3
RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
2
1
0
0.5 50
25
0 25 50 AMBIENT TEMPERATURE (°C)
75
100
100
SPECTRAL OUTPUT
1,000
POWER OUTPUT vs FORWARD CURRENT
RELATIVE POWER OUTPUT (%)
60
40
POWER OUTPUT, P (mW) o
80
100
10
DC PULSE 10µs, 100Hz
20
0 7 50
8 00
8 50 9 00 WAVELENGTH, (nm)
9 50
1,000
1 10
1 00 1,000 FORWARD CURRENT, IF (mA)
10,000
O P T O DIODE CORP.
750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 2 of 2
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