|
Details, datasheet, quote on part number:OD-880FJ
| |
Datasheet text preview:
HI-REL GaAlAs IR EMITTERS
1.00 MIN. GLASS DOME .015
OD-880FJ
FEATURES
ANODE (CASE)
.209 .220
· High reliability LPE GaAlAs IRLEDs · High power output · 880nm peak emission · Hermetically sealed TO-46 package · MIL-S-19500 screening available
.041
.183 .186
.152 .154 .017
.100
· No internal coatings All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
.030 .040 .197 .205
CATHODE
.036 45 °
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10µA VR = 0V MIN 6 TYP 8 88 0 80 8 1.55 5 30 17 0.5 0.5 1.9 MAX UNITS mW nm nm De g Volts Volts pF µsec µsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1 190mW 100mA 3A 5V 240°C Continuous Forward Current Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
Peak Forward Current (10µs, 400Hz)2
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -65°C TO 150°C 150°C 370°C/W Typical 120°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C
O P T O DIODE CORP.
750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 1 of 2
HI-REL GaAlAs IR EMITTERS
200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 1 00 1 25 AMBIENT TEMPERATURE (°C) 1 50 NO HEAT SINK INFINITE HEAT SINK
OD-880FJ
10 PEAK FORWARD CURRENT, Ip (amps)
THERMAL DERATING CURVE
MAXIMUM PEAK PULSE CURRENT
t = 10µs
1
t = 100µs t = 500µs
MA X I MU M R A T I N G S
0.1
t Ip T
D=
t T
0.01 0.01
0.1
1 DUTY CYCLE, D (%)
10
1 00
T Y P IC A L C H A R A C T E R IS T IC S
1 00 RELATIVE POWER OUTPUT (%)
DEGRADATION CURVE
IF = 20mA
10 0
RADIATION PATTERN
RELATIVE POWER OUTPUT (%)
90
IF = 50mA
80
80 IF = 100mA 70 TCASE = 25°C UNITS PRE CONDITIONED AT IF = 80mA, t = 168 HOURS
60
40
60
20
50
1 01
1 02
1 03 STRESS TIME, (hrs)
1 04
1 05
0 25
20
15
10
5 10 5 0 BEAM ANGLE, (deg)
15
20
25
4
FORWARD I-V CHARACTERISTICS
1.5 1.4
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, IF (amps)
3
RELATIVE POWER OUTPUT
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
2
1
0
0
1
2 3 4 FORWARD VOLTAGE, VF (volts)
5
6
0.5 50
25
0 25 50 AMBIENT TEMPERATURE (°C)
75
100
100
SPECTRAL OUTPUT
1,000
POWER OUTPUT vs FORWARD CURRENT
RELATIVE POWER OUTPUT (%)
60
40
POWER OUTPUT, P (mW) o
80
10 0
10
20
DC PULSE 10µs, 100Hz
0 750
800
850 900 WAVELENGTH, (nm)
950
1,000
1 10
100 1,000 FORWARD CURRENT, IF (mA)
10,000
O P T O DIODE CORP.
750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 2 of 2
|
|
