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Part: OD-880L
Category:
Optoelectronics
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Description: Medium Angle TO-46 Package 880nm Emitter
Company: Opto Diode
Datasheet: Download OD-880L datasheet File size : 255 kB
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Datasheet text preview:
HIGH-POWER GaAlAs IR EMITTERS
1.00 MIN. GLASS DOME .015
OD-880L
FEATURES
ANODE (CASE)
.209 .220
· High reliability liquid-phase epitaxially grown GaAlAs · 880nm peak emission for optimum matching with O DD-45W photodiode · Wide range of linear power output · Hermetically sealed TO-46 package
.041
.183 .152 .186 .156 .017 .024 .043 .143 .150
.100
· Medium emission angle for best coverage/power d ensity All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
CATHODE
.036 45 °
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Radiant Intensity, Ie Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10µA VR = 0V 5 MIN 18 TYP 20 50 88 0 80 35 1.55 30 17 0.5 0.5 1.9 MAX UNITS mW mW/sr nm nm De g Volts Volts pF µsec µsec
Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1 1 90mW 100mA 3A 5V 240°C Continuous Forward Current Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
Peak Forward Current (10µs, 400Hz)2
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55°C TO 100°C 100°C 400°C/W Typical 135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C
O P T O DIODE CORP.
750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 1 of 2
HIGH-POWER GaAlAs IR EMITTERS
200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 AMBIENT TEMPERATURE (°C) 1 00 NO HEAT SINK INFINITE HEAT SINK
OD-880L
10 PEAK FORWARD CURRENT, Ip (amps)
THERMAL DERATING CURVE
MAXIMUM PEAK PULSE CURRENT
t = 10µs
1
t = 100µs t = 500µs D= t T
MA X I MU M R A T I N G S
0.1
t Ip T
0.01 0.01
0.1
1 DUTY CYCLE, D (%)
10
1 00
T Y P IC A L C H A R A C T E R IS T IC S
100 RELATIVE POWER OUTPUT (%)
DEGRADATION CURVE
IF = 20mA RELATIVE POWER OUTPUT (%) 1 05
100
RADIATION PATTERN
90 IF = 50mA
80
80
60
70 TCASE = 25° C NO PRE BURN-IN PERFORMED
40
60
IF = 100mA
20
50
1 01
1 02
1 03 STRESS TIME, (hrs)
1 04
0 50
40
30
20
10 0 10 20 BEAM ANGLE, (deg)
30
40
50
4
FORWARD I-V CHARACTERISTICS
1.5 1.4
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, IF (amps)
3
RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
2
1
0
0.5 50
25
0 25 50 AMBIENT TEMPERATURE (°C)
75
100
100
SPECTRAL OUTPUT
1,000
POWER OUTPUT vs FORWARD CURRENT
RELATIVE POWER OUTPUT (%)
60
40
POWER OUTPUT, P (mW) o
80
100
10
DC PULSE 10µs, 100Hz
20
0 7 50
8 00
8 50 9 00 WAVELENGTH, (nm)
9 50
1,000
1 10
1 00 1,000 FORWARD CURRENT, IF (mA)
10,000
O P T O DIODE CORP.
750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 2 of 2
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