Details, datasheet, quote on part number: SFH3219
PartSFH3219
CategoryOptoelectronics => Photosensors => Phototransistors => SMT Phototransistors
TitleSMT Phototransistors
DescriptionPhototransistor in SMT TOPLED® Package With Lens
CompanyOsram Opto Semiconductors
DatasheetDownload SFH3219 datasheet
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Features, Applications

NPN-Silizium-Fototransistor in SMT-Gehäuse mit Linse Silicon NPN Phototransistor in SMT-Package with lens SFH 3219

Wesentliche Merkmale TOPLED mit Linse Speziell geeignet für Anwendungen im Bereich von 430 nm bis 1150 nm Hohe Linearität Für alle Lötverfahren geeignet Gehäusegleich mit SFH 4209, SFH 4219, SFH 4289 Anwendungen Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb Industrieelektronik ,,Messen/Steuern/Regeln" Automobiltechnik Sensorik Typ Type SFH 3219 Bestellnummer Ordering Code Q62702-P5551

Features TOPLED with lens Especially suitable for applications from to 1150 nm High linearity Suitable for all soldering methods Same package as SFH 4209, SFH 4219, SFH 4289 Applications Miniature photointerrupters Industrial electronics For control and drive circuits Automotive technology Sensor technology

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, 10 µs Collector surge current Verlustleistung, 25 °C Total power dissipation Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Wert Value Einheit Unit mA mW K/W

Kennwerte (TA = 25 °C, = 950 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit = 10% von Smax Spectral range of sensitivity 10% of Smax Bestrahlungsempfindliche Fläche ( 240 µm) Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität, VCE = 1 MHz, = 0 Capacitance Dunkelstrom Dark current VCE = 0 Fotostrom Photo current 0.1 mW/cm2, VCE 5 V Anstiegszeit/Abfallzeit Rise and fall time = 1 mA, VCC 1 k Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage 0.1 mW/cm2 Symbol S max Wert Value 430... 1150 Einheit Unit nm


 

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