Details, datasheet, quote on part number: SFH402
PartSFH402
CategoryOptoelectronics => Display => Infrared Emitters => Infrared Emitters in Metal Package
TitleInfrared Emitters in Metal Package
DescriptionGAAS Infrared Emitter in TO-18 Metal Package, 950 NM
CompanyOsram Opto Semiconductors
DatasheetDownload SFH402 datasheet
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Features, Applications

Wesentliche Merkmale Hergestellt im Schmelzepitaxieverfahren Kathode galvanisch mit dem Gehäuseboden verbunden Hohe Zuverlässigkeit Gute spektrale Anpassung an Si-Fotoempfänger Hermetisch dichtes Metallgehäuse SFH 400: Gehäusegleich mit SFH 216 SFH 401: Gehäusegleich mit BPX 43, BPY 62 SFH 402: Gehäusegleich mit BPX 38, BPX 65 Anwendungen Lichtschranken für Gleich- und Wechsellichtbetrieb IR-Gerätefernsteuerungen Sensorik Lichtgitter Typ Type SFH 400 SFH 400-3 SFH 401 SFH 401-3 SFH 402 SFH 402-3

Features Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Matches all Si-Photodetectors Hermetically sealed package SFH 400: Same package as SFH 216 SFH 401: Same package as BPX 43, BPY 62 SFH 402: Same package as BPX 38, BPX 65

Applications Photointerrupters IR remote control of various equipment Sensor technology Light-grille barrier

Gehäuse Package 18 A3 DIN 41876 (TO-18), Glaslinse, hermetisch dichtes Gehäuse, Anschlüsse 18 A3 DIN 41876 (TO-18) glass lens, hermetically sealed package, solder tabs lead spacing mm (1/10'')

Grenzwerte (TC = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range SFH 400, SFH 402 Betriebs- und Lagertemperatur Operating and storage temperature range SFH 401 Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, = 10 µs, = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 100 mA, 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth 50% of Imax = 100 mA, 20 ms Abstrahlwinkel Half angle SFH 400 SFH 401 SFH 402 Aktive Chipfläche Active chip area Symbol peak Wert Value 950 Einheit Unit nm Symbol Wert Value Einheit Unit °C

Kennwerte (TA = 25 °C) Characteristics (cont'd) Bezeichnung Parameter Abmessungen der aktiven Chipfläche Dimensions of the active chip area Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top SFH 400 SFH 401 SFH 402 Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei = 100 mA, = 50 Switching times, e from to 90% and from = 100 mA, = 50 Kapazität, Capacitance = 1 MHz Durchlaßspannung, Forward voltage = 100 mA, 100 µs Sperrstrom, Reverse current 5 V Gesamtstrahlungsfluß, Total radiant flux = 100 mA, 20 ms Temperaturkoeffizient von Ie bzw. 100 mA Temperature coefficient 100 mA Temperaturkoeffizient von VF, 100 mA Temperature coefficient of VF, 100 mA Temperaturkoeffizient von 100 mA Temperature coefficient 100 mA Symbol Wert Value × 0.5 Einheit Unit mm


 

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