Details, datasheet, quote on part number: SFH420
PartSFH420
CategoryOptoelectronics => Display => Infrared Emitters => Infrared Emitters in TOPLED® Package
TitleInfrared Emitters in TOPLED® Package
DescriptionGAAS Infrared Emitter in SMT TOPLED® Package, 950 NM
CompanyOsram Opto Semiconductors
DatasheetDownload SFH420 datasheet
Cross ref.Similar parts: XZTNI45W
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Features, Applications
GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package SFH 420 SFH 425

Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Gute Linearität (Ie = f [IF]) bei hohen Strömen Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Oberflächenmontage geeignet Gegurtet lieferbar SFH 420 Gehäusegleich mit SFH 320 SFH 425 Gehäusegleich mit SFH 325 SFH 425: Nur für IR-Reflow-Lötung geeignet. Anwendungen Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb, Lochstreifenleser Industrieelektronik ,,Messen/Steuern/Regeln" Automobiltechnik Sensorik Alarm- und Sicherungssysteme IR-Freiraumübertragung Typ Type Bestellnummer Ordering Code

Features Very highly efficient GaAs-LED Good Linearity (Ie = f [IF]) at high currents DC (with modulation) or pulsed operations are possible High reliability High pulse handling capability Suitable for surface mounting (SMT) Available on tape and reel SFH 420 same package as SFH 320 SFH 425 same package as SFH 325 SFH 425: Suitable only for IR-reflow soldering. Applications Miniature photointerrupters Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission

Gehäuse Package Kathodenkennzeichnung: abgesetzte Ecke cathode marking: bevelled edge TOPLED® SIDELED

Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, = 10 µs, = 0 Surge current Verlustleistung Power dissipation Symbol Wert Value Einheit Unit A mW K/W

Wärmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgröße 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Wärmewiderstand Sperrschicht - Lötstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 100 mA, 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth 50% of Imax 100 mA Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Symbol peak

Kennwerte (TA = 25 °C) Characteristics (cont'd) Bezeichnung Parameter Schaltzeiten, e von 10% auf 90% und von 90% auf 10%, bei = 100 mA, = 50 Switching times, e from to 90% and from = 100 mA, = 50 Kapazität, Capacitance = 1 MHz Durchlaßspannung, Forward voltage = 100 mA, 100 µs Sperrstrom, Reverse current 5 V Gesamtstrahlungsfluß, Total radiant flux = 100 mA, 20 ms Temperaturkoeffizient von Ie bzw. 100 mA Temperature coefficient 100 mA Temperaturkoeffizient von VF, 100 mA Temperature coefficient of VF, 100 mA Temperaturkoeffizient von 100 mA Temperature coefficient 100 mA Symbol Wert Value 0.5 Einheit Unit µs


 

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