Details, datasheet, quote on part number: SFH4500
PartSFH4500
CategoryOptoelectronics => Display => Infrared Emitters => Infrared Emitters in SMT Sidelooker Package
TitleInfrared Emitters in SMT Sidelooker Package
DescriptionHigh-speed Infrared Emitter in SMR® Package, 950 Nm, Half Angle ±10 °
CompanyOsram Opto Semiconductors
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Features, Applications
Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter SFH 4500 SFH 4505

Wesentliche Merkmale Leistungsstarke GaAs-LED (40mW) Hoher Wirkunsgrad bei kleinen Strömen Typische Peakwellenlänge 950nm Engwinkliger SMT-Sidelooker IR Reflow Löten geeignet Feuchte-Empfindlichkeitsstufe 3 nach JEDEC Standard J-STD-020A

Features High Power GaAs-LED (40mW) High Efficiency at low currents Typical peak wavelength 950nm Narrow angle SMT-Sidelooker Suitable for IR reflow soldering Moisture Sensitivity Level 3 according to JEDEC Standard J-STD-020A

Anwendungen Bauteil mit hoher Strahlstärke zur Oberflächenmontage (SMT) Schnelle Datenübertragung mit Übertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia) Analoge und digitale Hi-Fi Audio- und Videosignalübertragung Alarm- und Sicherungssysteme IR Freiraumübertragung IR-Scheinwerfer für Kameras

Applications Device with high radiant intensity suitable for surface mounting (SMT) High data transmission rate to 100 Mbaud (IR keyboard, Joystick, Multimedia) Analog and digital Hi-Fi audio and video signal transmission Alarm and safety equipment IR free air transmission IR spotlight for cameras

Bestellnummer Strahlstärkegruppierung 1) (IF = 20 ms) Ordering Code Radiant intensity grouping 1) Ie (mW/sr) Q62702-P5163 Q62702-P5164

gemessen bei einem Raumwinkel 0.01 sr measured at a solid angle 0.01 sr

Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom Surge current = 10 µs, = 0 Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung, freie Beinchenlänge max. 10 mm Thermal resistance junction - ambient, lead length between package bottom and PCB max. 10 mm Symbol Wert Value Einheit Unit mA A

Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength of peak emission = 100 mA, 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth 50% of Imax = 100 mA, 20 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10% Switching times, Ie from to 90% and from = 100 mA, = 20 ms, = 50 Kapazität Capacitance = 1 MHz Durchlaspannung Forward voltage = 100 mA, 100 µs Sperrstrom Reverse current 3 V Gesamtstrahlungsfluß Total radiant flux = 100 mA, 20 ms Temperaturkoeffizient von Ie bzw. e Temperature coefficient 100 mA Symbol peak Wert Value 950 Einheit Unit nm


 

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