Details, datasheet, quote on part number: A782/6RT119
CategoryDiscrete => Diodes & Rectifiers => Rectifier Diodes
Description53mm, 7000V, 825A
CompanySilicon Power
DatasheetDownload A782/6RT119 datasheet


Features, Applications

The A782 rectifier diode features a nominal 53mm silicon junction diameter design, manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

Average current Repetitive peak reverse voltage
Repetitive peak reverse current Forward voltage drop


Some Part number from the same manufacture Silicon Power
A800/6RT208A 77mm, 2600V, 4400A
A801/6RT211 77mm, 3200V, 3900A
A880/6RT217 77mm, 4500V, 2900A
C430 33mm, 1500V, 1200A
C440 40mm, 1600V, 900A
C441 40mm, 2000V, 750A
C448 40mm, 1400V, 700A
C451 33mm, 1500V, 1200A
C458 53mm, 1400V, 1300A
C476 33mm, 1500V, 1200A
C501/C502/6RT43 33, 2200V, 550A
C600/6RT44 40mm, 1200V, 900A
C601/6RT45 40mm, 1800V, 750A
C602/6RT46 40mm, 2600V, 600A
C604/6RT65 40mm, 4500V, 400A
C612/6RT42 40mm, 2100V, 725A
C613/6RT42 40mm, 2100V, 600A
C701/6RT100/154 53mm, 2200V, 1300A
C702/6RT112 53mm, 3200V, 1000A
C712/6RT107 53mm, 2100V, 1125A
C713/6RT107 53mm, 2100V, 1000A
Same catergory

2N5150 : Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 2A ;; HFE(min) = 70 ;; HFE(max) = 200 ;; @ Vce/ic = V / 0mA ;; FT = 60MHz ;; PD = 1W.

2SC5845 : VCEO(V) = 50 ;; IC(A) = 0.1 ;; HFE(min) = 160 ;; HFE(max) = 460 ;; Package = Mini3-G1.

BCX17 : BCX17; BCX18; PNP General Purpose Transistors;; Package: SOT23 (SST3).

BD243B : Epitaxial. NPN Epitaxial Silicon Transistor. Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD243C VCEO Collector-Emitter Voltage : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature C Value Units Symbol VCEO(sus) Parameter * Collector-Emitter.

IRF820A : 500V Single N-channel HexFET Power MOSFET in a TO-220AB Package. Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) = 100C IDM PD @TC = 25C.

SIGC156T120R2C : HV Chips. For Drive Application. : 1200V NPT technology 200m chip low turn-off losses short tail current positive temperature coefficient easy paralleling integrated gate resistor This chip is used for: power module BSM100GD120DN2 Applications: drives MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible.

BLF888AS : UHF Power LDMOS Transistor A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications..

CSD87351Q5D : Synchronous Buck NexFET Power Block The CSD87351Q5D NexFET power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high frequency capability in a small 5-mm 6-mm outline. Optimized for 5V gate drive applications, this product offers a flexible solution capable of offering a high density power.

03028-BX271AKZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BX, 0.00027 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 2.70E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

IRF240SMD-JQR-B : 13.9 A, 200 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.2500 ohms ; Package Type: HERMETIC SEALED, SMD1, 3 PIN ; Number of units in IC: 1.

IXGP20N30 : 40 A, N-CHANNEL IGBT, TO-220AB. s: Polarity: N-Channel ; Number of units in IC: 1.

KTP101B106M55BFT00 : CAPACITOR, CERAMIC, MULTILAYER, 100 V, X7R, 10 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 10 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface.

RK73B1HLTCM752G : RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 7500 ohm, SURFACE MOUNT, 0201. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0201, CHIP ; Resistance Range: 7500 ohms ; Tolerance: 2 +/- % ; Temperature Coefficient: 200 ±ppm/°C ; Power Rating:.

SM15180B265Z122LNXW-2 : CAPACITOR, CERAMIC, MULTILAYER, 1200 V, X7R, 2.6 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 2.6 microF ; Capacitance Tolerance: 80 (+/- %) ; WVDC: 1200 volts ; Mounting Style: Through Hole ; Operating.

VF30100S-E3 : 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Rectifier Configuration / Technology: Schottky ; Package: TO-220, LEAD FREE, PLASTIC, ITO-220AB, 3 PIN ; Number of Diodes: 1 ; VRRM: 100 volts ; IF: 30000 mA ; RoHS Compliant: RoHS.

WB0610-301Y/120MHZ : 1 FUNCTIONS, FERRITE BEAD. s: Bead Form Factor: Chip ; Devices in Package: 1 ; Operating Temperature: -20 to 85 C (-4 to 185 F).

0-C     D-L     M-R     S-Z