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Part: C714/6RT107
Category:
Discrete
-> Thyristors
Description: 53mm, 2100V, 875A
Company: Silicon Power
Datasheet: Download C714/6RT107 datasheet File size : 189 kB
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Datasheet text preview:
INVERTER THYRISTO R C714
53mm / 2000V / 40us/ 750Hz
Type C714 reverse blocking thyristor is suitable for inverter applications which do not employ an inverse parallel free wheeling diode and for which reverse recovery losses at elevated frequencies can be significant. The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially available heat dissipators and mechanical clamping hardware. ON-STATE CHARACTERISTIC
MODEL C714L
On-State Current, It (A) 10000
VDRM / VRRM -40 to +125oC 2000 Volts
o p e r a t i n g fr e q u e n c y 7 5 0 H z @ 5 0 % d u t y cycl e
P e a k Cu r r e n t , I t ( a m p e r e s ) 3,500 3,000 2,500 2,000 1,500 1,000 500
h a l f si n e ; 1 2 0 0 V b u s; n o r e ve r se vo l t a g e
Process Limit Pulsed Currents
1000 Tcase = 125 C
t r a p e z o i d a l p u l s e wi t h r e v e r s e v o l t a g e d i / d t = 7 5 A /u s c o m m u ta t i n g v o l t a g e = 8 0 0 V d c s n ub b e r: R = 1 3 o h m s C =0 . 5 uF 65 70 75 80
100 0 1 2 3 4 5 6 On-State Voltage, Vt (V)
V845onst
0 60
Cas e Te mper atu re, Tcas e (d egC)
THERMAL IMPEDANCE
.03
v 845t c
Zthj-C degC/W
M E C H A N I C A L OUTLINE
J
.02
C L
.01
.007 .005
Rthj-c(dc)= .023 C/W
C L
2 0° ±5 °
.003
AØ BØ
.001 0.01
0.1
1
10
D
Power On-time in Seconds
BØ
175 Great Valley Parkway, Malvern, PA 19355 USA
A = 2.96 in (75.2 mm) B =1.90 in (48.3 mm) D=1.07 in (27.2 mm)
p1 7/20/99 replaces 6/3/93
C714
LIMITING CHARACTERISTICS
PARAMETER Average on-state current SYMBOL IT(av) TEST CONDITIONS Tcase = 70oC 750 Hz with FWD TJ = -40 to +125oC
P e a k Cu r r e n t , I t ( A )
LIMIT 925 UNITS A
H a l f - S i n e P u l se s
10,000
Repetitive peak off- VDRM/VRRM state & reverse voltage Off-state & reverse current Peak half cycle non-repetitive surge current On-state voltage IDRM/IRRM ITSM
2000
volts
Tj = 125oC 60Hz (8.3ms 50Hz (10ms)
60
ma
16 14.7
kA)
1,000
volts
E n er gy wa tt - se c per pulse1.5 1 .0 .6 .5 .4 .3 .2 .1
40 20 10 6 5 4 3 2
VTM
IT = 1000A tP = 8.3ms TJ = 125oC
1.95
It
A/us
Critical rate of rise of on-state current
di/dtrep di/dtnon-rep
VD = 1500V 200 Tj=125oC 800 see gate drive
Critical rate of rise of off-state voltage Peak recovery current
dv/dt
VDCRIT = 80%VDRM Tj = 125oC TJ = 125oC @ 10A/us @ 50A/us @ 100 A/us
500
v/us
tp
100 10 100 1 ,0 0 0 1 0 ,0 0 0
IRM
56 214 368
A
P u l s e Wi d t h , t p ( u s ) v 8 4 5 s n e .ch 3
Circuit commutated turn-off time
tQ
400 V/us to 70% VDRM Vr = > 50V 40 Vr = 2 V 45
us
P e a k Cu r r e n t , I t ( A ) 1 0 ,0 0 0 E n e rg y wa t t - s e c p e r p u l se 1 .5 .6 1 .0 .5 .3 .4 1 ,0 0 0 .2 .1
T r a p e zo i d a l P u l se s d i /dt =50A /us
P e a k Cu r r e n t , I t ( A ) 1 0 ,0 0 0 E n e rg y wa t t - s e c p e r p u l se
T r a p e zo i d a l P u l se s d i /dt=10 0A /us
It
d i /d t
It
d i /d t
tp
40 20 10 3 2 6 5 4 100 100 1 .5 .2 .1 .6 .5 .4 .3 1 ,0 0 0 P u l s e Wi d t h , t p ( u s ) v 8 4 5 tr e 1 .c h 3 1 .0 1 ,0 0 0
tp
40 20 10 3 6 5 4
2
100 100
1 ,0 0 0 P u l s e Wi d t h , t p ( u s )
1 0 ,0 0 0
1 0 ,0 0 0
v 8 4 5 tr e 2 .c h 3
P2 7/20/99
C714
AVERAGE POWER LOSS half sine wave
Full Cycle Average Power, (W) 3500 NO REVERSE LOSSES 50% duty cycle @ freq
Peak Current Capability
ve r su s o p e r a t i n g f r e q u e n c y h a l f si n e & t r a p e zo i d a l @ 5 0 % d u ty cycl e R t h j - w a te r = 0 .3 2 d e g C /w a t t i n l e t wa t e r = 4 5 d e g
P e a k Cu r r e n t , I t ( a m p e r e s ) 3,500 3,000
3000
Tcase = 65 C
Tj = 125 C
2608 watts maximum allowable 2500
h a l f s i n e ; 1 2 0 0 V b u s; n o r e ve r s e vo l ta g e
t r a p e z o i d a l p u l s e wi t h r e v e r s e v o l t a g e c o mmu t at i n g v o l t a ge = 8 00 V dc s n u b b e r : R = 1 3 o h m s C =0 . 5 u F d i /d t ( A / u s) 25 50 75 100
1000 Hz
2000
2,500 2,000
1500
50 Hz
1,500 1,000 500
correction: Rth-water = 0.032oC/watt
1000
500
0
0 0
V845snp
0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 1 ,0 0 0 Operati ng Frequency, H z.
500
1000 1500 2000 2500 Peak Current, Itm (A)
3000
3500
v 845t c 1
AVERAGE POWER LOSS trapezoidal current wave di/dt = 50A/us
Full Cycle Average Power (W) 3500 NO REVERSE LOSSES 50% duty cycle @ freq
AVERAGE POWER LOSS trapezoidal current wave di/dt = 100A/us
Full Cycle Average Power (W) 3500 NO REVERSE LOSSES 50% duty cycle @ freq 3000
3000
Tcase = 65 C
Tj = 125 C
Tcase = 65 C
2500
Tj = 125 C
2500
2608 watts maximum allowable
2608 watts maximum allowable
2000
1000 Hz 50 Hz
1000 Hz
2000
500 Hz
1500
50 Hz
1500
1000
1000
500
500
0 0 500 1000 1500 2000 2500 Peak Current, Itm (A)
V845Ptr2
0 0 500 1000 1500 2000 2500 Peak Current, Itm (A)
V845Ptr1
P3 7/20/99
C714
Maximum Peak Recovery Current and Reverse Commutation Energy
for recommended circuit conditions
Recommended Gate Drive
Irm
Peak Voltage (supply or gate) volts 30 load line 25 OC = 30V SS = 3 A rise time 0.5 Us
Energy (watt-sec-per single) 4 commutating voltage = 800 Vdc snubber: R=13 ohms, C=1.0uF snappiness S = 0.5
amperes
400 368
Irm
3 293 300
20
thyristor gate
214 2 200
15
124 1
10
E
0.676 0.492
10 0.842 0
5
0.269 0 25 0 100
50
75
0 0 0.5 1 1.5 2 Peak Current (supply or gate) amperes
w192: gatedr
Circuit Commutating di/dt, (A/us)
v845re
Surge On-State Current Peak Half-Sine vs. Pulse Length
non-repetitive
Itsm (kA) 50 24
Maximum Repetitve Snubber Discharge
I2t
Snubber Dump, (A)
5 AS E6
2
200
100
14.7 10 1.08 1
Recommended Gate Drive 30V open circuit 3A short circuit in 0.5 us
0.432
1 1
v845itsm
3 Pulse Width - milliseconds
5
0.1 10
10 0 0.25 0.5 0.75 1 1.25 1.5 Gate Signal Risetime, (us)
P4 7/20/99
Others parts begin by c7
C7-1
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